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Measurements of residual stresses in Al film/silicon nitride substrate microcantilever beam systems

Published online by Cambridge University Press:  19 May 2011

Chiao-Chi Lin ,
Weileun Fang ,
Hung-Yi Lin ,
Chun-Hway Hsueh  and
Sanboh Lee
Chiao-Chi Lin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
Weileun Fang
Affiliation:
Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
Hung-Yi Lin
Affiliation:
Mechanical and System Research Laboratories, Industrial Technology Research Institute, Chutung, Hsinchu 31040, Taiwan
Chun-Hway Hsueh
Affiliation:
Department of Materials Science and Engineering, National Taiwan University, Taipei 10619 Taiwan
Sanboh Lee*
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Microcantilevers fabricated by microelectromechanical system processes were used to study the residual stresses in the film/substrate systems. Aluminum films were deposited on silicon nitride substrates by thermal evaporation at room and elevated temperatures, and residual stresses were characterized from the deflection profiles of the Al/SiNx microcantilevers. The Al/SiNx microcantilever beam made of room-temperature-deposited Al film was found to deflect toward the substrate side, which in turn resulted in compressive residual stress in the film. In contrary, the microcantilever of Al film deposited at 105 °C was found to deflect toward the side of Al film when the thickness ratio of film to substrate was greater than 0.31 and the residual film stresses were tensile. The axes with zero bending strain component and zero stresses, i.e., the bending and the neutral axes in the film/substrate system were also investigated. The results can be applied to the arm of the atomic force microscope to characterize its deflection and stresses.

Keywords

MicroelectromechanicalAlFilm
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 10 , 28 May 2011 , pp. 1279 - 1284
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1.Hsueh, C.H.: Modeling of elastic deformation of multilayers due to residual stresses and external bending. J. Appl. Phys. 91, 9652 (2002).CrossRefGoogle Scholar
2.Fang, W. and Lo, C.-Y.: On the thermal expansion coefficients of thin films. Sens. Actuators, A 84, 310 (2000).CrossRefGoogle Scholar
3.Fang, W. and Wickert, J.A.: Determining mean and gradient residual stresses in thin films using micromachined cantilevers. J. Micromech. Microeng. 6, 301 (1996).CrossRefGoogle Scholar
4.Mayr, S.G. and Samwer, K.: Model for intrinsic stress formation in amorphous thin films. Phys. Rev. Lett. 87, 036105 (2001).CrossRefGoogle ScholarPubMed
5.Koch, R.: The intrinsic stress of polycrystalline and epitaxial thin metal films. J. Phys. Condens. Matter 6, 9519 (1994).CrossRefGoogle Scholar
6.Nix, W.D. and Clemens, B.M.: Crystallite coalescence: A mechanism for intrinsic tensile stresses in thin films. J. Mater. Res. 14, 3467 (1999).CrossRefGoogle Scholar
7.Zhang, T.-Y., Lee, S., Guido, L.J., and Hsueh, C.H.: Criteria for formation of interface dislocations in a finite thickness epilayer deposited on a substrate. J. Appl. Phys. 85, 7579 (1999).CrossRefGoogle Scholar
8.Cammarata, R.C. and Trimble, T.M.: Surface stress model for intrinsic stresses in thin films. J. Mater. Res. 15, 2468 (2000).CrossRefGoogle Scholar
9.Pletea, M., Koch, R., Wendrock, H., Kaltofen, R., and Schmidt, O.G.: In situ stress evolution during and after sputter deposition of Al thin films. J. Phys. Condens. Matter 21, 1 (2009).CrossRefGoogle ScholarPubMed
10.Kim, S.P., Choi, H.M., and Choi, S.K.: A study on the crystallographic orientation with residual stress and electrical property of Al films deposited by sputtering. Thin Solid Films 322, 298 (1998).CrossRefGoogle Scholar
11.Lee, J.H., Kim, W.M., Lee, T.S., Chung, M.K., Cheong, B.K., and Kim, S.G.: Mechanical and adhesion properties of Al/AlN multilayered thin films. Surf. Coat. Tech. 133-134, 220 (2000).CrossRefGoogle Scholar
12.Hsueh, C.H. and Lee, S.: Effects of viscous flow on residual stresses in film/substrate systems. J. Appl. Phys. 91, 2760 (2002).CrossRefGoogle Scholar
13.Hu, Y.Y. and Huang, W.M.: Elastic and elastic-plastic analysis of multilayer thin films: Closed-form solutions. J. Appl. Phys. 96, 4154 (2004).CrossRefGoogle Scholar
14.Hsueh, C.H., Lee, S., and Lin, H.-Y.: Analyses of mode I edge delamination by thermal stresses in multilayer systems. Compos. Eng. 37, 1 (2006).CrossRefGoogle Scholar
15.Tsang, J.C., Mooney, P.M., Dacol, F., and Chu, J.O.: Measurements of alloy composition and strain in thin GexSi1-x layers. J. Appl. Phys. 75, 8098 (1994).CrossRefGoogle Scholar
16.Perova, T.S., Lyutovich, K., Kasper, E., Waldron, A., Oehme, M., and Moore, R.A.: Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates. Mater. Sci. Eng., B 135, 192 (2006).CrossRefGoogle Scholar
17.Zoo, Y., Adams, D., Mayer, J.W., and Alford, T.L.: Investigation of coefficient of thermal expansion of silver thin film on different substrates using x-ray diffraction. Thin Solid Films 513, 170 (2006).CrossRefGoogle Scholar
18.Nix, W.D.: Mechanical properties of thin films. Metall. Trans. A 20, 2217 (1989).CrossRefGoogle Scholar
19.Fang, W. and Wickert, J.A.: Comments on measuring thin-film stresses using bi-layer micromachined beams. J. Micromech. Microeng. 5, 276 (1995).CrossRefGoogle Scholar
20.Fang, W., Tsai, H.-C., and Lo, C.-Y.: Determining thermal expansion coefficients of thin films using micromachined cantilevers. Sens. Actuators, A 77, 21 (1999).CrossRefGoogle Scholar
21.Hou, M.T.-K. and Chen, R.: Effect of width on the stress-induced bending of micromachined bilayer cantilevers. J. Micromech. Microeng. 13, 141 (2003).CrossRefGoogle Scholar
22.McCarthy, J., Pei, Z., Becker, M., and Atteridge, D.: FIB micromachined submicron thickness cantilevers for the study of thin film properties. Thin Solid Films 358, 146 (2000).CrossRefGoogle Scholar
23.Riley, F.L.: Silicon nitride and related materials. J. Am. Ceram. Soc. 83, 245 (2000).CrossRefGoogle Scholar
24.Akamine, S., Barrett, R.C., and Quate, C.F.: Improved atomic force microscope images using microcantilevers with sharp tips. Appl. Phys. Lett. 57, 316 (1990).CrossRefGoogle Scholar
25.Grow, R.J., Minne, S.C., Manalis, S.R., and Quate, C.F.: Silicon nitride cantilevers with oxidation-sharpened silicon tips for atomic force microscopy. J. Microelectromech. Syst. 11, 317 (2002).CrossRefGoogle Scholar
26.Khan, A., Philip, J., and Hess, P.: Young’s modulus of silicon nitride used in scanning force microscope cantilevers. J. Appl. Phys. 95, 1667 (2004).CrossRefGoogle Scholar
27.Viani, M.B., Schäffer, T.E., Chand, A., Rief, M., Gaub, H.E., and Hansma, P.K.: Small cantilevers for force spectroscopy of single molecules. J. Appl. Phys. 86, 2258 (1999).CrossRefGoogle Scholar
28.Toivola, Y., Thurn, J., Cook, R.F., Cibuzar, G., and Roberts, K.: Influence of deposition conditions on mechanical properties of low-pressure chemical vapor deposited low-stress silicon nitride films. J. Appl. Phys. 94, 6915 (2003).CrossRefGoogle Scholar
29.Habermehl, S.: Stress relaxation in Si-rich silicon nitride thin films. J. Appl. Phys. 83, 4672 (1998).CrossRefGoogle Scholar
30.Shi, W., Zhang, H., Zhang, G., and Li, Z.: Modifying residual stress and stress gradient in LPCVD Si3N4 film with ion implantation. Sens. Actuators, A 130-131, 352 (2006).CrossRefGoogle Scholar
31.Bouridah, H., Mansour, F., Beghoul, M.R., Mahamdi, R., and Temple-Boyer, P.: Properties of non-stoichiometric nitrogen doped LPCVD silicon thin films. Cryst. Res. Technol. 45, 119 (2010).CrossRefGoogle Scholar
32.Chuang, W.-H., Luger, T., Fettig, R.K., and Ghodssi, R.: Mechanical property characterization of LPCVD silicon nitride thin films at cryogenic temperatures. J. Microelectromech. Syst. 13, 870 (2004).CrossRefGoogle Scholar
33.Huang, C.-K., Lou, W.-M., Tsai, C.-J., Wu, T.-C., and Lin, H.-Y.: Mechanical properties of polymer thin film measured by the bulge test. Thin Solid Films 515, 7222 (2007).CrossRefGoogle Scholar
34.Stoney, G.G.: The tension of metallic films deposited by electrolysis. Proc. R Soc. Lond., Ser. A 82, 172 (1909).Google Scholar
35.Klein, C.A.: How accurate are Stoney’s equation and recent modifications. J. Appl. Phys. 88, 5487 (2000).CrossRefGoogle Scholar