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Low-temperature synthesis of Zn3P2 nanowire

Published online by Cambridge University Press:  21 June 2011

In-Tae Bae*
Affiliation:
Small Scale Systems Integration and Packaging Center, State University of New York at Binghamton, Binghamton, New York 13902
Parag Vasekar
Affiliation:
Center for Autonomous Solar Power, State University of New York at Binghamton, Binghamton, New York 13902
Daniel VanHart
Affiliation:
Center for Autonomous Solar Power, State University of New York at Binghamton, Binghamton, New York 13902
Tara Dhakal
Affiliation:
Center for Autonomous Solar Power, State University of New York at Binghamton, Binghamton, New York 13902
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

High-quality Zn3P2 nanowires are synthesized at a temperature as low as 350 °C using Zn foil and trioctylphosphine by chemical reflux method. Scanning electron microscopy and transmission electron microscopy (TEM) images show their diameters vary from ∼15 to 70 nm. Energy dispersive x-ray spectroscopy and nanobeam electron diffraction patterns in combination with structure factor simulation reveal that the nanowires have tetragonal α-Zn3P2 structure. Based on high-resolution TEM images and their fast Fourier transform patterns, Zn3P2 nanowires are considered to grow on a vicinity of the possibly highest surface energy plane of (101) with a growth direction parallel to [101].

Type
Materials Communications
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1.Fagen, E.A.: Optical properties of Zn3P2. J. Appl. Phys. 50, 6505 (1979).CrossRefGoogle Scholar
2.Hermann, A.M., Madan, A., Wanlass, M.W., Badri, V., Ahrenkiel, R., Morrison, S., and Gonzalez, C.: MOCVD growth and properties of Zn3P2 and Cd3P2 films for thermal photovoltaic applications. Sol. Energy Mater. Sol. Cells 82, 241 (2004).CrossRefGoogle Scholar
3.Yang, R., Chueh, Y.-L., Morber, J.R., Snyder, R., Chou, L.-J., and Wang, Z.L.: Single-crystalline branched zinc phosphide nanostructures: Synthesis, properties, and optoelectronic devices. Nano Lett. 7, 269 (2007).CrossRefGoogle ScholarPubMed
4.Fessenden, R.W., Sobhanadri, J., and Subramanian, V.: Minority-carrier lifetime in thin-films of Zn3P2 using microwave and optical transient measurements. Thin Solid Films 266, 176 (1995).CrossRefGoogle Scholar
5.Kakishita, K., Aihara, K., and Suda, T.: Zinc phosphide epitaxial-growth by photo-MOCVD. Appl. Surf. Sci. 80, 281 (1994).CrossRefGoogle Scholar
6.Misiewicz, J., Bryja, L., Jezierski, K., Szatkowski, J., Mirowska, N., Gumienny, Z., and Placzekpopko, E.: Zn3P2-a new material for optoelectronic devices. Microelectron. J. 25, R23 (1994).CrossRefGoogle Scholar
7.Bichat, M.P., Monconduit, L., Pascal, J.L., and Favier, F.: Anode materials for lithium ion batteries in the Li-Zn-P system. Ionics 11, 66 (2005).CrossRefGoogle Scholar
8.Kishore, M.V.V.M.S. and Varadaraju, U.V.: Electrochemical reaction of lithium with Zn3P2. J. Power Sources 144, 204 (2005).CrossRefGoogle Scholar
9.Shen, G.Z., Bando, Y., Hu, J.Q., and Goldberg, D.: Single-crystalline trumpetlike zinc phosphide nanostructures. Appl. Phys. Lett. 88, 143105 (2006).CrossRefGoogle Scholar
10.Shen, G., Bando, Y., Ye, C., Yuan, X., Sekiguchi, T., and Goldberg, D.: Single-crystal nanotubes of II3-V2 semiconductors. Angew. Chem. Int. Ed. 45, 7568 (2006).CrossRefGoogle ScholarPubMed
11.Shen, G., Chen, P.-C., Bando, Y., Goldberg, D., and Zhou, C.: Bicrystalline Zn3P2 and Cd3P2 nanobelts and their electronic transport properties. Chem. Mater. 20, 7319 (2008).CrossRefGoogle Scholar
12.Liu, C., Dai, L., Ma, R.M., Yang, W.Q., and Qin, G.G.: P-Zn3P2 single nanowire metal-semiconductor field-effect transistors. J. Appl. Phys. 104, 034302 (2008).CrossRefGoogle Scholar
13.Liu, C., Dai, L., You, L.P., Xu, W.J., Ma, R.M., Yang, W.Q., Zhang, Y.F., and Qin, G.G.: Synthesis of high quality p-type Zn3P2 nanowires and their application in MISFETs. J. Mater. Chem. 18, 3912 (2008).CrossRefGoogle Scholar
14.Shen, G., Chen, P.-C., Bando, Y., Goldberg, D., and Zhou, C.: Single-crystalline and twinned Zn3P2 nanowires: Synthesis, characterization, and electronic properties. J. Phys. Chem. C 112, 16405 (2008).CrossRefGoogle Scholar
15.Williams, D.B. and Carter, C.B.: Transmission Electron Microscopy (Plenum, New York, 1996, Chap. 18).CrossRefGoogle Scholar
16.Chen, J.-H., Tai, M.-F., and Chi, K.-M.: Catalytic synthesis, characterization and magnetic properties of iron phosphide nanowires. J. Mater. Chem. 14, 296 (2004).CrossRefGoogle Scholar
17.Khanna, P.K., Jun, K.-W., Hong, K.B., Baeg, J.-O., and Mehrotra, G.K.: Synthesis of indium phosphide nanoparticles via catalytic cleavage of phosphorus carbon bond in n-trioctylphosphine by indium. Mater. Chem. Phys. 92, 54 (2005).CrossRefGoogle Scholar
18.Henkes, A.E., Vasquez, Y., and Schaak, R.E.: Converting metals into phosphides: A general strategy for the synthesis of metal phosphide nanocrystals. J. Am. Chem. Soc. 129, 1896 (2007).CrossRefGoogle ScholarPubMed
19.Henkes, A.E. and Schaak, R.E.: Trioctylphosphine: A general phosphorus source for the low-temperature conversion of metals into metal phosphides. Chem. Mater. 19, 4234 (2007).CrossRefGoogle Scholar
20.Shen, G., Ye, C., Goldberg, D., Hu, J., and Bando, Y.: Structure and cathodluminescence of hierarchical Zn3P2/ZnS nanotube/nanowire heterostructures. Appl. Phys. Lett. 90, 073115 (2007).CrossRefGoogle Scholar
21.Hayami, W. and Otani, S.: Surface energy and growth mechanism of β-tetragonal boron crystal. J. Phys. Chem. C 111, 10394 (2007).CrossRefGoogle Scholar