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Low temperature reactions of thin layers of Mn with Si

Published online by Cambridge University Press:  31 January 2011

Lin Zhang  and
Douglas G. Ivey
Lin Zhang
Affiliation:
Department of Mining, Metallurgical and Petroleum Engineering, University of Alberta, Edmonton, Alberta, Canada, T6G 2G6
Douglas G. Ivey
Affiliation:
Department of Mining, Metallurgical and Petroleum Engineering, University of Alberta, Edmonton, Alberta, Canada, T6G 2G6
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Abstract

Reactions between manganese thin films and silicon substrates, annealed at relatively low temperatures (<430 °C), have been systematically investigated. Three phases, i.e., Mn3Si, Mn5Si3, and MnSi, were formed through a layered growth process. The formation sequence for these silicides was Mn3Si, MnSi, and then Mn5Si3. The unusual phenomena of coexistence of these three phases and simultaneous growth of two phases (MnSi and Mn5Si3) were also observed. A model has been proposed to explain the growth behavior. The formation sequence of Mn3Si, MnSi, and then Mn5Si3, and simultaneous growth of MnSi and Mn5Si3, can be explained by considering both thermodynamic and kinetic effects. Only those reactions that are thermodynamically allowed and kinetically preferred can take place. Kinetic preference is determined by the composition in the reaction region, which is controlled by the diffusion flux of the moving reactant. The proposed model is also compared with existing models.

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Articles
Information
Journal of Materials Research , Volume 6 , Issue 7 , July 1991 , pp. 1518 - 1531
Copyright
Copyright © Materials Research Society 1991

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