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Light-induced defects in aluminum nitride ceramics

Published online by Cambridge University Press:  18 February 2016

J. H. Harris  and
R. A. Youngman
J. H. Harris
Affiliation:
BP Research, Warrensville Research Center, 4440 Warrensville Center Road, Cleveland, Ohio 44128
R. A. Youngman
Affiliation:
BP Research, Warrensville Research Center, 4440 Warrensville Center Road, Cleveland, Ohio 44128
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Extract

Aluminum nitride (AlN) ceramic samples exhibit a dramatic photo-darkening when exposed to UV radiation. In this paper, this phenomenon has been investigated utilizing photo-induced absorption measurements, where the transmission of a visible probe beam is monitored before and after exposure to a UV pump beam. Changes in the probe transmission as large 60% have been observed. The results of this study show that the center responsible for the photo-induced absorption process is an aluminum vacancy-oxygen impurity complex which resides in the AlN lattice. An energy level diagram is constructed which is consistent with these experimental findings.

Type
Research Article
Information
Journal of Materials Research , Volume 8 , Issue 1 , January 1993 , pp. 154 - 162
Copyright
Copyright © Materials Research Society 1993

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References

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