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Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures

Published online by Cambridge University Press:  03 March 2011

C. Chen ,
M.C. Plante ,
C. Fradin  and
R.R. LaPierre
C. Chen
Affiliation:
Centre for Emerging Device Technologies, Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada
M.C. Plante
Affiliation:
Centre for Emerging Device Technologies, Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada
C. Fradin
Affiliation:
Department of Physics and Astronomy and Department of Biochemistry and Biomedical Sciences, McMaster University, Hamilton, Ontario L8S 4M1, Canada
R.R. LaPierre*
Affiliation:
Centre for Emerging Device Technologies, Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

GaP–GaAsP segmented nanowires (NWs), with diameters ranging between 20 and 500 nm and lengths between 0.5 and 2 μm, were catalytically grown from Au particles on a GaAs (111)B substrate in a gas source molecular beam epitaxy system. The morphology of the NWs was either pencil-shaped with a tapered tip or rod-shaped with a constant diameter along the entire length. Stacking faults were observed for most NWs with diameters greater than 30 nm, but thinner ones tended to exhibit fewer defects. Moreover, stacking faults were more likely found in GaAsP than in GaP. The composition of the pencil NWs exhibited a core–shell structure at the interface region, and rod-shaped NWs resulted in planar and atomically abrupt heterointerfaces. A detailed growth mechanism is presented based on a layer-by-layer growth mode for the rod-shaped NWs and a step-flow growth mode for the tapered region of the pencil NWs.

Keywords

NanostructureIII-VMolecular-beam epitaxy (MBE)
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 11 , November 2006 , pp. 2801 - 2809
Copyright
Copyright © Materials Research Society 2006

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