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Laser-induced forward transfer: A new approach for the deposition of high Tc superconducting thin films

Published online by Cambridge University Press:  31 January 2011

E. Fogarassy
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire Phase (ER du CNRS n° 292), 23 rue du Loess, F-67037 Strasbourg Cedex, France
C. Fuchs
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire Phase (ER du CNRS n° 292), 23 rue du Loess, F-67037 Strasbourg Cedex, France
F. Kerherve
Affiliation:
Groupe de Physique des Solides de l'ENS, Université Paris VII, 2 Place Jussieu, F-75251 Paris Cedex 05, France
G. Hauchecorne
Affiliation:
Groupe de Physique des Solides de l'ENS, Université Paris VII, 2 Place Jussieu, F-75251 Paris Cedex 05, France
J. Perrière
Affiliation:
Groupe de Physique des Solides de l'ENS, Université Paris VII, 2 Place Jussieu, F-75251 Paris Cedex 05, France
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Abstract

We propose in this work a new approach, named laser-induced forward transfer, for the rapid deposition and patterning in a clean environment of high Tc superconducting thin films. A stoichiometric high Tc compound is initially deposited in a thin layer on an optically transparent support by laser evaporation or another more conventional technique. By irradiating under vacuum or in air the precoated layer with a strongly absorbed single laser pulse through the transparent support, we are able to remove the film from its support to be transferred onto a selected target substrate, held in contact to the original film. Using this technique, we have successfully transferred with one single pulse, provided by an excimer or a Nd:YAG laser, YBaCuO and BiSrCaCuO precoated thin films on various substrates. The Rutherford backscattering spectrometry experiments do not show any strong modification in the composition of the transferred layer against the source material, and the superconducting phases for the two types of compounds were obtained after subsequent thermal annealing carried out in a furnace around 850–900 °C in O2. For the BiSrCaCuO films transferred onto MgO substrates, we have measured an onset critical temperature of about 90 K with a zero resistance at 80 K.

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Articles
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1Ehrlich, D. J. and Tsao, J. Y.J. Vac. Sci. Technol. Bl (4), 969 (1983).CrossRefGoogle Scholar
2Rytz-Froidevaux, Y., Salathe, R. P. and Gilgen, H. H.Appl. Phys. A37, 121 (1985).CrossRefGoogle Scholar
3Dijkkamp, D.Venkatesan, T.Wu, X. D.Shaheen, S.A.Jisrawi, N.Min-Lee, Y. H., McLean, W. L. and Croft, M.Appl. Phys. Lett. 51 (8), 619 (1987).CrossRefGoogle Scholar
4High Temperature Superconductors, edited by Brodsky, M. B.Dynes, R. C.Kitazawa, K. and Tuller, H.L. (MRS, Pittsburgh, PA, 1988), Vol. 99.Google Scholar
5Perriere, J.Fogarassy, E.Hauchecorne, G.Wang, X. Z.Fuchs, C.Rochet, F.Roseman, I.Simon, C.Defourneau, R. M.Kerherve, F.Enard, J. P. and Laurent, A.Solid State Commun. 67 (4), 345 (1988).CrossRefGoogle Scholar
6Kim, B. F.Bohandy, J.Green, W. J.Agostinelli, E.Adrian, F. J.Moorjani, K.Swartzendruber, L. J.Shull, R.D.Bennett, L. H. and Wallace, J. S.Appl. Phys. Lett. 53 (4), 321 (1988).CrossRefGoogle Scholar
7Guarnieri, C.R.Roy, R.A.Saenger, K.L.Shivashankar, S.A.Yee, D.S. and Cuomo, J. J.Appl. Phys. Lett. 53 (6), 532 (1988).CrossRefGoogle Scholar
8Toulemonde, M.Muller, J. C. and Stuck, R.Trans. ASME 108, 102 (1986).Google Scholar
9Bohandy, J.Kim, B.F. and Adrian, F. J.J. Appl. Phys. 60 (4), 1538 (1986).CrossRefGoogle Scholar
10Bohandy, J.Kim, B. F.Adrian, F. J. and Jette, A. N.J. Appl. Phys. 63 (4), 1158 (1988).CrossRefGoogle Scholar
11Baseman, R. J.Gupta, A.Sausa, R. C. and Progler, C. in Laser and Particle-Beam Chemical Processing for Microelectronics, edited by Ehrlich, D. J.Higashi, G. S. and Oprysko, M.M. (MRS, Pittsburgh, PA, 1988), Vol. 101, p. 237.Google Scholar
12Doolittle, L.R.Nucl. Instrum. Methods B9, 344 (1985).CrossRefGoogle Scholar
13Lang, S.Narita, N.Higashida, K. and Mazaki, H.Jpn. J. Appl. Phys. 26, L1394 (1987).CrossRefGoogle Scholar