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Laser synthesis and crystallographic characterization of ultrafine SiC powders

Published online by Cambridge University Press:  31 January 2011

R. Fantoni ,
E. Borsella ,
S. Piccirillo ,
R. Ceccato  and
S. Enzo
R. Fantoni
Affiliation:
ENEA, Dip. TIB, U.S. Fis. Appl., CRE Frascati, C.P. 65, I-00044 Frascati, Roma, Italy
E. Borsella
Affiliation:
ENEA, Dip. TIB, U.S. Fis. Appl., CRE Frascati, C.P. 65, I-00044 Frascati, Roma, Italy
S. Piccirillo
Affiliation:
ENEA guest
R. Ceccato
Affiliation:
ENEA and Università di Venezia guest
S. Enzo
Affiliation:
Dipartimento di Chimica Fisica, D.D. 2137, 1-30123 Venezia, Italy
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Abstract

High purity, ultrafine SiC powders have been produced from gas phase reactants (SiH4, C2H2) in a CO2 laser induced process. The flow reactor designed to operate with a medium power (10–50 W) continuous wave CO2 laser source is described. The mechanism of gas phase reactions involved has been investigated by means of on-line optical diagnostics. Powders produced have been characterized by means of conventional chemical and spectroscopic methods. The x-ray results point out a growth mechanism by coalescence; i.e., whole islands move in the flame to take part in binary collisions, analogously to that observed for particles produced by inert gas evaporation.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 1 , January 1990 , pp. 143 - 150
Copyright
Copyright © Materials Research Society 1990

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References

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