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Joining of silicon nitride ceramics for high-temperature applications

Published online by Cambridge University Press:  31 January 2011

Rong-Jun Xie
Affiliation:
National Institute for Research in Inorganic Materials, Namiki 1-1, Ibaraki 305-0044, Japan
Mamoru Mitomo
Affiliation:
National Institute for Research in Inorganic Materials, Namiki 1-1, Ibaraki 305-0044, Japan
Li-Ping Huang
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, People's Republic of China
Xi-Ren Fu
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, People's Republic of China
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Extract

A refractory silicon nitride joint, which contains β–Si3N4 grains and grain boundary amorphous phase in the joined layer, was developed with the aid of a ceramic adhesive based on the system Si3N4–Y2O3–SiO2–Al2O3. The similarity in chemistry and microstructure between the parent ceramic and the joint zone indicates that the joining mechanism is the same as that involved in the sintering of Si3N4. The resultant joint exhibits a high bond strength of 550 MPa at 25 °C and retains a strength of 332 MPa at 1000 °C. Post-joining hot-isostatic pressing was applied to strengthen the joint, resulting in increased strengths of 668 MPa at room temperature and 464 MPa at 1000 °C.

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Articles
Copyright
Copyright © Materials Research Society 2000

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