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Ionization-induced effects in amorphous apatite at elevated temperatures

Published online by Cambridge University Press:  31 January 2011

In-Tae Bae ,
Yanwen Zhang ,
William J. Weber ,
Manabu Ishimaru ,
Yoshihiko Hirotsu  and
Mikio Higuchi
In-Tae Bae*
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
Yanwen Zhang
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
William J. Weber
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
Manabu Ishimaru
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Osaka 567-0047, Japan
Yoshihiko Hirotsu
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Osaka 567-0047, Japan
Mikio Higuchi
Affiliation:
Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan
*
a)Address all correspondence to this author: e-mail: [email protected]
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Abstract

Electron-beam-induced effects in preamorphized Sr2Nd8(SiO4)6O2 were investigated in situ using transmission electron microscopy with 200-keV electrons at temperatures ranging from 380 to 780 K. Within the electron-irradiated area, epitaxial recrystallization was observed from the amorphous/crystalline interface toward the surface, with the rate of recrystallization increasing as temperature increased from 380 to 580 K. Structural contrast features (i.e., O deficient amorphous material), as well as recrystallization, were observed outside of the irradiation area at temperatures from 680 to 780 K. Ionization-induced processes and local nonstoichiometry induced by oxygen migration and desorption are possible mechanisms for the electron-beam- induced recrystallization and for the formation of the structural contrast features, respectively.

Keywords

Electron irradiationEpitaxyAmorphous
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 4 , April 2008 , pp. 962 - 967
Copyright
Copyright © Materials Research Society 2008

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References

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