Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-23T12:50:47.743Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion mixing of Ni–Pt films on Si

Published online by Cambridge University Press:  31 January 2011

T. Sawada ,
C.S. Pai ,
S.S. Lau ,
D.B. Poker  and
Ch. Buchal
T. Sawada
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, San Diego, La Jolla, California 92093
C.S. Pai
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, San Diego, La Jolla, California 92093
S.S. Lau
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, San Diego, La Jolla, California 92093
D.B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Ch. Buchal
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Get access

Abstract

The reactions between bilayered Ni/Pt films and Si (100) substrates induced by thermal annealing and ion mixing were investigated. Thermal annealing of Si/Pt/Ni and Si/Ni/Pt samples led to layer reversal at low temperatures (∼ 300°to 400°C) and the formation of a ternary phase at high temperatures (∼ 700°C). These results are consistent with those reported in the literature. Ion mixing of both types of samples led to silicide formation without layer reversal. This effect is interpreted in terms of a change of moving species from metal (in thermal annealing) to Si (in ion mixing). The mixing efficiency between Pt and Ni is observed to be enhanced when Si is mixed together with these two metals.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 2 , April 1986 , pp. 322 - 326
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Lau, S. S., Liu, B. X., and Nicolet, M.-A., Nucl. Instrum. Methods 209/210, 97(1983).Google Scholar
2d'Heurle, F. M., Tsai, M. Y., Petersson, C. S., and Stritzker, B., J. Appl. Phys. 53, 3067 (1982).Google Scholar
3Pai, C. S., Lau, S. S., Poker, D. B., and Hung, L. S., J. Appl. Phys. 58, 4172 (1985).Google Scholar
4Pai, C. S., Lau, S. S., Poker, D. B., and Hung, L. S., J. Appl. Phys. 58, 4178 (1985).Google Scholar
5See, for example, Nicolet, M.-A. and Lau, S. S., in VLSI Electronics: Microstructure Science, edited by Einspruch, N. G. and Larra-bee, G. B. (Academic, New York, 1982), Vol. 6, Chap. 6.Google Scholar
6Hung, L. S., Mayer, J. W., Pai, C. S., and Lau, S. S., J. Appl. Phys. 58, 1527 (1985).CrossRefGoogle Scholar
7Affolter, K., Zhao, X. A., and Nicolet, M.-A., J. Appl. Phys. 58, 3087 (1985).CrossRefGoogle Scholar
8Hung, L. S. and Mayer, J. W., in the Proceedings of the Materials Research Society Symposium on Thin Films-Interfaces and Phenomena, Boston, MA, December 1985 (to be published).Google Scholar
9Finstad, T. G., Thin Solid Films 51, 411 (1978).Google Scholar
10Finstad, T. G. and Nicolet, M.-A., J. Appl. Phys. 50, 303 (1979).CrossRefGoogle Scholar
11Banwell, T., Liu, B. X., Golecki, I., and Nicolet, M.-A., Nucl. Instrum. Methods 209/210, 125 (1983).Google Scholar
12d'Heurle, F. M., Baglin, J. E. E., and Clark, G. J., J. Appl. Phys. 57, 1426 (1985).Google Scholar