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Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphization

Published online by Cambridge University Press:  31 January 2011

J. A. Edmond ,
R. F. Davis ,
S. P. Withrow  and
K. L. More
J. A. Edmond
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
S. P. Withrow
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6048
K. L. More
Affiliation:
Oak Ridge Associated Universities, Oak Ridge, Tennessee 37831
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Abstract

Damage in single-crystal β-SiC(100) as a result of ion bombardment has been studied using Rutherford backscattering/channeling and cross-section transmission electron microscopy. Samples were implanted with Al (130 keV) and Si (87 keV) with doses between 4 and 20 × 1014 cm−2 at liquid nitrogen and room temperatures. Backscattering spectra for He+ channeling as a function of implantation dose were initially obtained in the [110] direction to determine damage accumulation. However, the backscattered yield along this direction was shown to be enhanced as a result of uniaxial implantation-induced strain along [100]. Spectra obtained by channeling along this latter direction were used along with the computer program TRIM to calculate the critical energy for amorphization. The results for amorphization of β-SiC at liquid nitrogen and room temperature are ∼ 14.5 eV/atom and ∼ 22.5 eV/atom, respectively.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 2 , April 1988 , pp. 321 - 328
Copyright
Copyright © Materials Research Society 1988

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