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Ion beam mixing of U-based bilayers

Published online by Cambridge University Press:  31 January 2011

François Rossi ,
M. Nastasi ,
M. Cohen ,
C. Olsen ,
J.R. Tesmer  and
Chuck Egert
François Rossi
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545.
M. Nastasi
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
M. Cohen
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
C. Olsen
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
J.R. Tesmer
Affiliation:
Physics Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Chuck Egert
Affiliation:
Martin Marietta Y12 Plant, Oak Ridge, Tennessee 37831
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Abstract

Bilayer samples of U/Al, U/Ti, U/Si, and U/C have been ion beam mixed with 400 keV Ar and U/Al with Xe ions at doses from 2 × 1015 to 1 × 1017 ions/cm2. Mixing experiments were performed at various temperatures between 77 and 420 K. The amount of interfacial mixing, 4Dt, follows a linear dose dependence below a critical temperature, depending on the system studied. Below this temperature, the mixing efficiency, defined as ∂(4Dt)Φ where 4Dt is the mixing and Φ is the dose, is temperature independent. Its value, as well as the value of the transition temperature, agrees well with the thermodynamical model of chemically biased diffusion in a thermal spike for the four systems tested. The transition between the thermal spike regime and the temperature enhanced mixing regime was interpreted on the basis of an intracascade mechanism. The formation of an intermetallic compound in the U/Al system was detected and interpreted on a qualitative basis by crystallographic considerations.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 6 , June 1991 , pp. 1175 - 1187
Copyright
Copyright © Materials Research Society 1991

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