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Investigation of the interface reactions of Ti thin films with AlN substrate

Published online by Cambridge University Press:  31 January 2011

Xiangjun He ,
Si-Ze Yang ,
Kun Tao  and
Yudian Fan
Xiangjun He
Affiliation:
Group 101, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People's Republic of China
Si-Ze Yang
Affiliation:
Group 101, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People's Republic of China
Kun Tao
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People's Republic of China
Yudian Fan
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People's Republic of China
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Abstract

Pure bulk AlN substrates were prepared by hot-pressing to eliminate the influence of an aid-sintering substance on the interface reactions. AlN thin films were deposited on Si(111) substrates to decrease the influence of charging on the analysis of metal/AlN interfaces with x-ray photoelectron spectroscopy (XPS). Thin films of titanium were deposited on bulk AlN substrates by e-gun evaporation and ion beam assisted deposition (IBAD) and deposited on AlN films in situ by e-gun evaporation. Solid-state reaction products and reaction mechanism of the Ti/AlN system annealed at various temperatures and under IBAD were investigated by XPS, transmission electron microscopy (TEM), x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS). Ti reacted with AlN to form a laminated structure in the temperature range of 600 °C to 800 °C. The TiAl3 phase was formed adjacent to the AlN substrate, TiN, and Ti4N3−x as well as Ti2N were formed above the TiAl3 layer at the interface. Argon ion bombardment during Ti evaporation promoted the interface reactions. No reaction products were detected for the sample as-deposited by evaporation. However, XPS depth profile of the Ti/AlN/Si sample showed that Ti–N binding existed at the interface between the AlN thin films and the Ti thin films.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 3 , March 1997 , pp. 846 - 851
Copyright
Copyright © Materials Research Society 1997

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References

1.Serphin, D. P., Lasky, R. C., and Li, C. Y., Principles of Electronic Packaging (McGraw-Hill, New York, 1989), p. 282.Google Scholar
2.Asai, H., Ueno, F., Hizanoya, N., Kimura, T., Endo, K., Takahashi, T., and Sugiura, Y., IEEE Trans. Comp. Hybrides Manufac. Technol. 13, 457 (1990).CrossRefGoogle Scholar
3.Westwood, A. D. and Notis, M. R., Adv. Ceram. 26, 171 (1989).Google Scholar
4.Loehman, R. E. and Tomsia, A. P., Acta Metall. Mater. 40, S75 (1992).CrossRefGoogle Scholar
5.Carim, A. H. and Loehman, R. E., J. Mater. Res. 15, 1520 (1990).CrossRefGoogle Scholar
6.Carter, W. B. and Papagorge, M. V., J.Vac. Sci. Technol. A10, 3460 (1992).Google Scholar
7.Yasumoto, T., Yamakawa, K., Iwase, N., and Shinosawa, N., J. Ceram. Soc. Jpn. 101, 969 (1993).CrossRefGoogle Scholar
8.Yang, J., Wang, C., Yan, X. S., Tao, K., Liu, B. X., and Fan, Y. D., Appl. Phys. Lett. 60, 2790 (1993).CrossRefGoogle Scholar
9.Chu, W. K., Mayer, J. M., and Nicolet, M. A., Backscattering Spectrometry (Academic Press, New York, 1978).CrossRefGoogle Scholar
10.Mencer, D. E., Hess, T. R., Mebrahtu, T., and Naugle, D. G., J. Vac. Sci. Technol. A9, 1610 (1991).CrossRefGoogle Scholar
11.Bain, I., Cache, O., and Kubaschewski, O., Thermochemical Properties of Inorganic Substance (Springer, Berlin, 1977).Google Scholar