Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-23T13:09:53.207Z Has data issue: false hasContentIssue false
  • English
  • Français

Intrinsic stress effects on the growth of planar SiO2 films

Published online by Cambridge University Press:  31 January 2011

T. J. Delph  and
M-T. Lin
T. J. Delph
Affiliation:
Department of Mechanical Engineering and Mechanics, Lehigh University, Bethlehem, Pennsylvania 18015
M-T. Lin
Affiliation:
Department of Mechanical Engineering and Mechanics, Lehigh University, Bethlehem, Pennsylvania 18015
Get access

Abstract

We report here on the results of a numerical study on the effects of intrinsic stress on the growth of SiO2 thin films. In accordance with a widely accepted model of stress effects upon silicon oxidation, we assume that the intrinsic stress affects only the oxidant diffusion rate. We examine several different models of stress-assisted diffusion. In the first of these models, the diffusivity is taken to be an exponential function of the stress, whereas in the second, the stress gradient appears as an additional term in the standard diffusion equation. Intrinsic stress effects result in deviations of up to 18% in expected layer thickness, depending upon the mode of oxidation and the diffusion model adopted. The implications of these results for the measurement of diffusion coefficients in SiO2 films are discussed.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 12 , December 1999 , pp. 4508 - 4513
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Marcus, R.B. and Sheng, T.T., J. Electrochem. Soc. 129, 1278 (1982).CrossRefGoogle Scholar
2.Kao, D.B., McVittie, J.P., Nix, W.D., and Sarasat, K.C., IEEE Trans. Electron Devices ED–34, 1008 (1987).Google Scholar
3.Mihaly, A., Jaccodine, R.J., and Delph, T.J., Appl. Phys. Lett. 74, 1981 (1999).CrossRefGoogle Scholar
4.Jaccodine, R.J. and Schlegel, W.A., J. Appl. Phys. 37, 2429 (1996).CrossRefGoogle Scholar
5.Kobeda, E. and Irene, E.A., J. Vac. Sci. Technol. B6, 574 (1988).CrossRefGoogle Scholar
6.Delph, T.J., J. Appl. Phys. 83, 786 (1998).CrossRefGoogle Scholar
7.Deal, B.E. and Grove, A.S., J. Appl. Phys. 36, 3770 (1965).CrossRefGoogle Scholar
8.Sutardja, P. and Oldham, W.G., IEEE Trans. Electron Devices ED–36, 2415 (1989).CrossRefGoogle Scholar
9.Rafferty, C.S., Ph.D. Thesis, Stanford University, Stanford, CA (1991).Google Scholar
10.Senez, V., Collard, D., Baccus, B., Brault, M., and Lebailly, J., J. Appl. Phys. 76, 3285 (1986).CrossRefGoogle Scholar
11.Li, J.C.M, Oriani, R.A., and Darken, L.S., Z. Phys. Chem. Neue Folge, Frankfurt 49, 271 (1966).CrossRefGoogle Scholar
12.Liu, H.W., ASME J. Basic Eng. 92, 633 (1970).CrossRefGoogle Scholar
13.Stephenson, G.B., Acta Metall. 36, 2663 (1988).CrossRefGoogle Scholar
14.Thomas, J.P. and Chopin, C.E., Int. J. Eng. Sci. 37, 1 (1999).CrossRefGoogle Scholar
15.van Leuwen, H.P., Eng. Frac. Mech. 6, 141 (1974).CrossRefGoogle Scholar
16.Sofronis, P. and McMeeking, R.M., J. Mech. Phys. Solids 37, 317 (1989).CrossRefGoogle Scholar
17.Hill, J., One-Dimensional Stefan Problems: An Introduction (Wiley, New York, 1987).Google Scholar
18.Hebert, K.J., Labayen, T., and Irene, E.A., in Physics and Chemistry of SiO2 and the Si-SiO2 Interface III, edited by Massoud, H.Z., Helms, C.R., and Poindexter, E.H. (Plenum, New York, 1996).Google Scholar
19.Shackelford, J.F., Masaryk, J.S., and Fulrath, R.M., J. Am. Ceram. Soc. 53, 417 (1970).CrossRefGoogle Scholar
20.Spinner, S., J. Am. Ceram. Soc. 45, 394 (1962).CrossRefGoogle Scholar
21.Brantley, W.A., J. Appl. Phys. 44, 534 (1973).CrossRefGoogle Scholar
22.Irene, E.A. and van der Meulen, Y.J., J. Electrochem. Soc. 123, 1380 (1976).CrossRefGoogle Scholar
23.Lamkin, M.A., Riley, F.L., and Fordham, R.J., J. Eur. Ceram Soc. 10, 347 (1992).CrossRefGoogle Scholar
24.Yu, C-L., Flinn, P.A., and Bravman, J.C., in Materials Reliability in Microelectronics VII, edited by Clement, J.J., Keller, R.R., Krisch, K.S., Sanchez, J.E. Jr, and Suo, Z. (Mater. Res. Soc. Symp. Proc. 473, Pittsburgh, PA, 1997), p. 95.Google Scholar
25.Doremus, R.H., Earth Planet. Sci. Lett. 163, 43 (1998).CrossRefGoogle Scholar