Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-09T12:44:11.541Z Has data issue: false hasContentIssue false
  • English
  • Français

Internal gettering heat treatments and oxygen precipitation in epitaxial silicon wafers

Published online by Cambridge University Press:  31 January 2011

W. Wijaranakula ,
P.M. Burke  and
L. Forbes
W. Wijaranakula
Affiliation:
Silicon Materials Laboratory, Department of Electrical and Computer Engineering, and Department of Mechanical Engineering, Oregon State University, Corvallis, Oregon 97331
P.M. Burke
Affiliation:
Silicon Materials Laboratory, Department of Electrical and Computer Engineering, and Department of Mechanical Engineering, Oregon State University, Corvallis, Oregon 97331
L. Forbes
Affiliation:
Silicon Materials Laboratory, Department of Electrical and Computer Engineering, and Department of Mechanical Engineering, Oregon State University, Corvallis, Oregon 97331
Get access

Abstract

As-received P/P + (100) epitaxial silicon wafers were heat treated using the one-, two-, and three-step internal gettering heat treatment cycles in wet oxygen, dry oxygen, and nitrogen ambients. The results indicate that ambients have an effect on the growth of bulk defects and denuded zone formation in the epitaxial silicon wafers.

Type
Articles
Information
Journal of Materials Research , Volume 1 , Issue 5 , October 1986 , pp. 693 - 697
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Tan, T. Y., Gardner, E. E., and Tice, W. K., Appl. Phys. Lett. 30, 175 (1977).CrossRefGoogle Scholar
2Nagasawa, K., Matsushita, Y., and Kishino, S., Appl. Phys. Lett. 37, 622 (1980).CrossRefGoogle Scholar
3d'Aragona, F. Secco, Tsui, R. K., Liaw, H. M., and Fejes, P. L., in Defects in Silicon, edited by Bullis, W. Murray and Kimerling, L. C. (The Electrochemical Society, Pennington, NJ, 1983), p. 166.Google Scholar
4Hu, S. M., Appl. Phys. Lett. 35, 561 (1980).Google Scholar
5Kock, A. J. R. de and Wijgert, W. M. Van de, Appl. Phys. Lett. 38, 888 (1981).Google Scholar
6Wright-Jenkins, M., J. Electrochem. Soc. 124, 752 (1977).Google Scholar
7Wada, K., Inoue, N., and Osaka, J., Mater. Res. Soc. Proc. 14, 125 (1983).Google Scholar
8Abe, T., Harada, H., and Chikawa, J., in Ref. 7, p.1.Google Scholar
9Mankowski, J. R., Heck, D., Baginksi, T. A., Kenney, D., and Tressler, R. E. in Semiconductor Processing, ASTM STP 850, edited by Gupta, D. C. (American Society for Testing and Materials, Philadelphia, PA, 1984), p. 219.Google Scholar
10Andrews, J., in Ref. 3, p. 133.Google Scholar