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Interfacial reaction-induced morphological instabilities in thin Al/Pt and Al/Pd films

Published online by Cambridge University Press:  31 January 2011

E. G. Colgan ,
C.-Y. Li  and
J. W. Mayer
E. G. Colgan
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
C.-Y. Li
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
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Abstract

Aluminum films 1–6 kÅ thick deposited on Pt or Pd layers developed voids after annealing between 200 and 275°C. Void formation was also observed when the Pt layer was deposited above the Al film. The amount of Al surrounding the voids increased as the voids grew. The rate of void growth decreased as the thickness of the initial Al film increased. The driving force appears to be surface tension. The controlling mechanism is diffusion along the Al/Pt or Al/Pd interface made possible by compound formation there.

Type
Articles
Information
Journal of Materials Research , Volume 2 , Issue 5 , October 1987 , pp. 557 - 567
Copyright
Copyright © Materials Research Society 1987

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References

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