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Interfacial Morphology and Shear Deformation of Flip Chip Solder Joints

Published online by Cambridge University Press:  31 January 2011

J. W. Jang
Affiliation:
Department of Materials Science —Los Angeles, Los Angeles, California 90095-1595
C. Y. Liu
Affiliation:
Department of Materials Science —Los Angeles, Los Angeles, California 90095-1595
P. G. Kim
Affiliation:
Department of Materials Science —Los Angeles, Los Angeles, California 90095-1595
K. N. Tu*
Affiliation:
Department of Materials Science —Los Angeles, Los Angeles, California 90095-1595
A. K. Mal
Affiliation:
Department of Mechanical —Los Angeles, Los Angeles, California 90095-1597
D. R. Frear
Affiliation:
Motorola, Semiconductor Products Sector, Tempe, Arizona 85284
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Abstract

We examined the interfacial morphology and shear deformation of flip chip solder joints on an organic substrate (chip-on-board). The large differences in the coefficients of thermal expansion between the board and the chip resulted in bending of the 1-cm2 chip with a curvature of 57 ± 12 cm. The corner bump pads on the chip registered a relative misalignment of 10 μm with respect to those on the board, resulting in shear deformation of the solder joints. The mechanical properties of these solder joints were tested on samples made by sandwiching two Si chips with electroless Ni(P) as the under-bump metallization and 25 solder interconnects. Joints were sheared to failure. Fracture was found to occur along the solder/Ni3Sn4 interface. In addition, cracking and peeling damages of the SiO2 dielectric layer were observed in the layer around the solder balls, indicating that damage to the dielectric layer may have occurred prior to the fracture of the solder joints due to a large normal stress. The failure behavior of the solder joints is characterized by an approximate stress analysis.

Type
Articles
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1997.Google Scholar
2.Chang, C.S., Oscilowski, A., and Bracken, R.C., IEEE Circuits Devices Mag. 14, 45 (1998).CrossRefGoogle Scholar
3.Shukla, R., Murali, V., and Bhansali, A., Proc. IEEE Electron. Comp. Technol. Conf. 945 (1999).Google Scholar
4.Nagesh, V.K., Peddada, R., Ramalingam, S., Sur, B., and Taiy, A., Proc. IEEE Electron. Comp. Technol. Conf. 975 (1999).Google Scholar
5.Jang, J.W., Kim, P.G., Tu, K.N., Frear, D.R., and Thompson, P., J. Appl. Phys. 85, 8456 (1999).CrossRefGoogle Scholar
6.Kim, P.G., Jang, J.W., Tu, K.N., and Frear, D.R., J. Appl. Phys. 86, 1266 (1999).CrossRefGoogle Scholar
7.Liu, C.Y., Chen, C., Liao, C.N., and Tu, K.N., Appl. Phys. Lett. 75, 58 (1999).CrossRefGoogle Scholar
8.Tu, K.N., Mayer, J.W., and Feldman, L.C., Electronic Thin Film Science (Macmillan, New York, 1992), Chap. 4.Google Scholar
9.Ünal, Ö., Barnard, D.J., and Anderson, I.E., Scr. Mater. 40, 271 (1999).CrossRefGoogle Scholar
10.Dieter, G.E., Mechanical Metallurgy (McGraw-Hill, New York, 1976), Chap. 9.Google Scholar
11.Mal, A.K. and Singh, S., Deformation of Elastic Solids (Prentice Hall, Englewood Cliffs, NJ, 1991), Chap. 7.Google Scholar
12.Messler, R.W., Joining of Advanced Materials (Butterworth-Heinemann, Boston, MA, 1993), p. 356.Google Scholar
13.Liu, C.Y., Chen, C., Mal, A.K., and Tu, K.N., J. Appl. Phys. 85, 3882 (1999).CrossRefGoogle Scholar