Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-27T04:49:46.992Z Has data issue: false hasContentIssue false
  • English
  • Français

Interface reactions and phase equilibrium between Ni/Cu under-bump metallization and eutectic SnPb flip-chip solder bumps

Published online by Cambridge University Press:  06 January 2012

Chien-Sheng Huang  and
Jenq-Gong Duh
Chien-Sheng Huang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Jenq-Gong Duh
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Get access

Abstract

Ni-based under-bump metallization (UBM) for flip-chip application is widely used in today's electronics packaging. In this study, electroplated Ni UBM with different thickness was used to evaluate the interfacial reaction during multiple reflow between Ni/Cu UBM and eutectic Sn–Pb solders in the 63Sn–37Pb/Ni/Cu/Ti/Si3N4/Si multilayer structure. During the first cycle of reflow, Cu atoms diffused through electroplated Ni and formed the intermetallic compound (IMC) (Ni1−x, Cux)3Sn4. After more than three times of reflow, Cu atoms further diffused through the boundaries of (Ni1−x, Cux)3Sn4 IMC and reacted with Ni and Sn to form another IMC of (Cu1-y, Niy)6Sn5. After detailed quantitative analysis by electron probe microanalysis, the values of y were evaluated to remain around 0.4; however, the values of x varied from 0.02 to 0.35. The elemental distribution of IMC in the interface of the joint assembly could be correlated to the Ni–Cu–Sn ternary equilibrium. In addition, the mechanism of (Cu1−y, Niy)6Sn5 formation was also probed.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 4 , April 2003 , pp. 935 - 940
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Lau, J.H., Flip Chip Technologies (McGraw-Hill, New York, 1996).Google Scholar
Patterson, D.S., Eleniu, P., and Leal, J.A., Adv. Electron. Pkg. 1, 337 (1997).Google Scholar
Chang, C.S., Oscilowski, A., and Bracken, R.C., IEEE Circuits Devices Mag. 14, 45 (1998).CrossRefGoogle Scholar
Liu, A.A., Kim, H.K., Tu, K.N., and Totta, P.A., J. Appl. Phys. 80, 2774 (1996).CrossRefGoogle Scholar
Kim, H.K., Tu, K.N., and Totta, P.A., Appl. Phys. Lett. 68, 2204 (1996).CrossRefGoogle Scholar
Lin, K.L. and Liu, Y.C., in Proceedings of Electronic Components and Technology Conference (IEEE, Piscataway, NJ, 1999), p. 607.Google Scholar
Young, B.L. and Duh, J.G., J. Electron. Mater. 30, 878 (2001).CrossRefGoogle Scholar
Huang, C.S., Yeh, J.H., Young, B.L., and Duh, J.G., J. Electron. Mater. 31, 1230 (2002).CrossRefGoogle Scholar
Kang, S.K., Rai, R.S., and Purrshothaman, S., J. Electron. Mater. 25, 1113 (1996).Google Scholar
Nah, J.W. and Paik, K.W., IEEE Trans. Compon. Packag. Technol. 25, 32 (2002).Google Scholar
Huang, C.S., Duh, J.G., Chen, Y.M., and Wang, J.H., J. Electron. Mater. 32, 89 (2002).CrossRefGoogle Scholar
Goldstein, J.I., Scanning Electron Microscopy and X-ray Microanalysis, 2nd ed. (Plenum Press, New York, 1992).CrossRefGoogle Scholar
Chen, C.M. and Chen, S.W., J. Appl. Phys. 90, 1208 (2001).CrossRefGoogle Scholar
Chen, W.T., Ho, C.E., and Kao, C.R., J. Mater. Res. 17, 26 (2002).Google Scholar
Massalski, T.B., Okamoto, H., Subramanian, P.R., and Kacprzak, L., Binary Alloy Phase Diagrams (ASM International, Materials Park, OH, 1990), p. 1442.Google Scholar
Massalski, T.B., Okamoto, H., Subramanian, P.R., and Kacprzak, L., Binary Alloy Phase Diagrams (ASM International, Materials Park, OH, 1990), p. 863.Google Scholar
Massalski, T.B., Okamoto, H., Subramanian, P.R., and Kacprzak, L., Binary Alloy Phase Diagrams (ASM International, Materials Park, OH, 1990), p. 1481.Google Scholar
Bader, S., Gust, W., and Hieber, H., Acta Metall. Mater. 43, 329 (1995).Google Scholar