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Interdiffusions and reactions in Cu/TiN/Ti/Si and Cu/TiN/Ti/SiO2/Si multilayer structures

Published online by Cambridge University Press:  31 January 2011

Sa-Kyun Rha ,
Won-Jun Lee ,
Seung-Yun Lee ,
Dong-Won Kim ,
Chong-Ook Park  and
Soung-Soon Chun
Sa-Kyun Rha
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305–701, Korea
Won-Jun Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305–701, Korea
Seung-Yun Lee
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305–701, Korea
Dong-Won Kim
Affiliation:
Department of Materials Engineering, Kyonggi University, Suwon, 440–760, Korea
Chong-Ook Park
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305–701, Korea
Soung-Soon Chun
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, 305–701, Korea
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Abstract

Sputtered TiN (30–120 nm thick)/Ti (30 nm thick) films were studied as a diffusion barrier between silicon substrate and copper films. The effects of TiN thickness and the existence of a SiO2 layer between Ti and silicon substrate on the diffusion barrier property were investigated using various characterization methods. The copper diffusion barrier property of TiN/Ti was found to be affected not only by the TiN thickness, that is diffusion distance, but also by the microstructure of the TiN, which changes with the thickness of TiN film. The existence of the SiO2 layer enhanced the diffusion barrier property of TiN/Ti. This is because the SiO2 layer between Ti and Si inhibited the formation of titanium silicides, so the Ti layer was available to be used as the sacrificial diffusion barrier for copper.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 12 , December 1997 , pp. 3367 - 3372
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1.Muraka, S. P., in Tungsten and Other Advanced Metals for ULSI Applications in 1990, edited by Smith, G. C. and Blumenthal, R. (Mater. Res. Soc. Conf. Proc. No. V6-C6, Pittsburgh, PA, 1990), p. 179.Google Scholar
2.Singer, P., Semicond. Int., 34 (September 1993).CrossRefGoogle Scholar
3.Toyama, N., Solid State Electron. 26, 37 (1983).CrossRefGoogle Scholar
4.Shacham-Diamond, Y., Dedhia, A., Hoffstetterand, D., and Oldham, W. G., J. Electrochem. Soc. 140, 2427 (1993).CrossRefGoogle Scholar
5.Sumi, I., Blomberg, M., and Saarilahti, J., J. Vac. Sci. Technol. A 3, 2233 (1985).Google Scholar
6.Fumimura, N., Nishida, N., Ito, L., and Nakayama, Y., Mater. Sci. Eng. A 108, 153 (1989).CrossRefGoogle Scholar
7.Armigliato, A. and Valdre, G., J. Appl. Phys. 61, 390 (1987).CrossRefGoogle Scholar
8.Warg, S. Q., Raaijmakers, I. J., Burrow, B. J., Suthar, S., Redkar, S., and Kim, K. B., J. Appl. Phys. 68, 5176 (1990).Google Scholar
9.Olowolafe, J. O., Li, J., Mayer, J. W., and Colgan, E. G., Appl. Phys. Lett. 58, 469 (1991).CrossRefGoogle Scholar
10.Chang, C. A. and Hu, C. K., Appl. Phys. Lett. 57, 617 (1990).CrossRefGoogle Scholar
11.Olowolafe, J. O., Mogab, C. J., Ciregory, R. B., and Kottke, M., J. Appl. Phys. 72, 4099 (1992).CrossRefGoogle Scholar
12.Sumi, I., Maenpaa, M., Nicolet, M. A., and Luomajavi, M., J. Electrochem. Soc. 130, 1215 (1983).Google Scholar
13.Chamberlain, M. B., Thin Solid Films 91, 155 (1982).CrossRefGoogle Scholar
14.Norman, J. A. T., Muratore, B. A., Dyer, P. N., Roberts, D. A., and Hochberg, A. K., in Proc. 8th IEEE Interconnection Conference (IEEE, New York, 1991), p. 123.Google Scholar
15.Lee, W-J., Min, J-S., Rha, S-K., Chun, S-S., Park, C-O., and Kim, D-W., J. Mater. Sci.: Mater. El. 7, 111 (1996).Google Scholar
16.Brebec, G., Segun, R., Sella, C., Bevenot, J., and Martin, J. C., Acta Metall. 28, 327 (1980).CrossRefGoogle Scholar