Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-23T11:29:06.934Z Has data issue: false hasContentIssue false
  • English
  • Français

Insulator-metal transitions at microindentations

Published online by Cambridge University Press:  31 January 2011

John J. Gilman
John J. Gilman
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
Get access

Abstract

For all tetrahedrally bonded semiconductors (five group IV plus nine III-V compounds and nine II-VI compounds), it is shown that the critical pressure needed to transform the semiconductor into the metallic state correlates with the microindentation hardness number. The same is done for five alkaline earth oxides. The critical transition pressures have been estimated from Herzfeld's theory—that is, from the compression at which the dielectric constant diverges to infinity. Experimental transition pressures also correlate with hardness numbers, and they correlate with the activation energies for dislocation motion. Since these transitions are electronic they can be influenced by photons, doping (donors enhance while acceptors inhibit them), currents, surface states, etc. Microindentation also provides a simple experimental tool for observing pressure and/or shear induced transformations.

Type
Communications
Information
Journal of Materials Research , Volume 7 , Issue 3 , March 1992 , pp. 535 - 538
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Refrerences

1.Pharr, G.M., Oliver, W.C., and Harding, D.S., J. Mater. Res. 6, 1129 (1991).CrossRefGoogle Scholar
2.Hu, J. Z., Merkle, L. D., Menoni, C. S., and Spain, I. L., Phys. Rev. 34B, 4679 (1986).CrossRefGoogle Scholar
3.Gilman, J.J., J. Appl. Phys. 46, 5110 (1975).CrossRefGoogle Scholar
4. It is planned to apply the model to Hugoniot Elastic Limits later.Google Scholar
5.Herzfeld, K. F., Phys. Rev. 29, 701 (1927).CrossRefGoogle Scholar
6.Edwards, P.P. and Sienko, M.J., Phys. Rev. 17B, 2575 (1978).CrossRefGoogle Scholar
7.Szigeti, B., Proc. Roy. Soc. 204A, 51 (1950).Google Scholar
8.Landolt-Bornstein New Series 111117a; Semiconductors, edited by K-H. Hellwege (Springer-Verlag, 1982); see also Ericson, F., Johansson, S., and Schweitz, J., Mater. Sci. Eng. A105/106, 131 (1988).CrossRefGoogle Scholar
9.Chelikowsky, J.R., Phys. Rev. 35B, 1174 (1987).CrossRefGoogle Scholar
10.Grady, D. E., Sandia Corporation, private communication, July 1991.Google Scholar
11.Chang, K. J. and Cohen, M.L., Phys. Rev. 35B, 8196 (1987).CrossRefGoogle Scholar
12.Edwards, P.P. and Sienko, M.J., Int. Rev. Phys. Chem. 3, 83 (1983).Google Scholar