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Influence of oxygen atmosphere on the crystal growth of copper(II) oxide

Published online by Cambridge University Press:  31 January 2011

Edward C. Milliken  and
James F. Cordaro
Edward C. Milliken
Affiliation:
New York State College of Ceramics at Alfred University, Alfred, New York 14802
James F. Cordaro
Affiliation:
New York State College of Ceramics at Alfred University, Alfred, New York 14802
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Abstract

Single crystal growth of CuO, synthetic tenorite, was accomplished in oxygen atmosphere by the chemical vapor transport technique. We present the first systematic study of the growth of CuO in various partial pressures of oxygen. Crystals were grown using trace, 0.1, and 0.5 atm partial pressures of oxygen. The growth temperatures used were 820 and 865 °C. Typical dimensions of the crystals obtained were 1 × 2 × 0.25 mm. We have shown that the stoichiometry of single crystal CuO can be controlled during the growth process. The crystals exhibited cation deficient stoichiometry, Cu1−xO, with x increasing from less than 0.005 with no added oxygen, up to 0.05 with 0.5 atm O2 when grown at 865 °C.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 1 , January 1990 , pp. 53 - 56
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Schafer, H., Chemical Transport Reactions (Academic Press, New York, 1964).Google Scholar
2 Kleber, W., Raidt, H., and Klein, R., Kristall Tech. 5, 479. (1970).CrossRefGoogle Scholar
3 Krabbes, G., Oppermann, H., and Wolf, E., J. Cryst. Growth 64, 353 (1983).CrossRefGoogle Scholar
4 Krabbes, G. and Oppermann, H., Kristall Tech. 12, 929 (1977).CrossRefGoogle Scholar
5 Schafer, H. and Etzel, K., Anor, Z.. Allg. Chem. 291, 294 (1957).CrossRefGoogle Scholar
6 Schafer, H., in Proc. of the 5th Materials Research Symposium, Solid State Chemistry, edited by Roth, R. S. and Schneider, S. J., Jr. (NBS, Washington, DC, 1972), NBS Spec. Pub. 364, pp. 413–435.Google Scholar
7 Schafer, H. and Jagusch, W., in Ref. 6, p. 422.Google Scholar
8 Mercier, J., Cryst, J.. Growth 56, 235 (1982).CrossRefGoogle Scholar
9 Krabbes, G., Hoanh, D., Hai, N., Oppermann, H., Velichkow, S., and Peshev, P., Cryst, J.. Growth 82, 477 (1987).CrossRefGoogle Scholar
10 Kershaw, R. and Wold, A., in Proc. Symposium on Mass Transport in Oxides, October 22–25, 1967, edited by Wachtman, J. B. and Franklin, A.D. (NBS, Washington, DC, 1968), NBS Spec. Pub. 296, p. 205.Google Scholar
11 Slack, G. A. (private communication).Google Scholar
12 Wyckhoff, R.W., Crystal Structures (Wiley Interscience, New York, 1963), pp. 140–141.Google Scholar
13 Brewer, L. and Lofgren, N. L., J. Am. Chem. Soc. 72, 3038 (1950).CrossRefGoogle Scholar