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The influence of drying temperature on the close packed structure of silanized monolayers deposited on indium tin oxide (ITO) substrates

Published online by Cambridge University Press:  23 February 2011

Stefano D’Elia
Affiliation:
INFM-CNR-LICRYL Laboratory and CEMIF.CAL, Department of Physics, University of Calabria, Rende (CS), I-87036 Italy
Valentin Barna
Affiliation:
Faculty of Physics, University of Bucharest, 077125 Bucharest, Romania
Nicola Scaramuzza*
Affiliation:
INFM-CNR-LICRYL Laboratory and CEMIF.CAL, Department of Physics, University of Calabria, Rende (CS), I-87036 Italy
Roberto Bartolino
Affiliation:
INFM-CNR-LICRYL Laboratory and CEMIF.CAL, Department of Physics, University of Calabria, Rende (CS), I-87036 Italy
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Molecular organization of self-assembled n-dimethyl-n-octadecyl-3-aminopropyltrimethoxysilychloride (DMOAP) layers on indium tin oxide (ITO) coated glass substrates was thoroughly investigated. The layer thickness for each deposition was determined by variable angle spectroscopic ellipsometry (VASE), while from static contact-angle measurements we deduced valuable information regarding the ordering of the molecular structures at the solid-air interface. In particular, the DMOAP thin film formation was studied for two different drying temperatures (85 °C and 120 °C). While at Tdrying = 85 °C we observed the formation of a molecular monolayer characterized by a close packed structure, at the higher temperature the DMOAP molecules “bend” at the substrate as they stack in relatively disordered clusters. A qualitative interpretation of this phenomenon is given, in good agreement both with the obtained experimental data and experimental investigation reported in the scientific literature. The observations regarding the DMOAP molecular level organization as a function of substrate temperature could bring essential information to the self assembly research community and also explain some important physical phenomena occurring at interfaces.

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Articles
Copyright
Copyright © Materials Research Society 2009

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