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The influence of crystallization route on the SrBi2Nb2O9 thin films

Published online by Cambridge University Press:  31 January 2011

S. M. Zanetti ,
E. R. Leite ,
E. Longo  and
J. A. Varela
S. M. Zanetti
Affiliation:
Departamento de Química, UFSCar, P.O. Box 676, 13560-905 S˜ao Carlos, SP, Brazil
E. R. Leite
Affiliation:
Departamento de Química, UFSCar, P.O. Box 676, 13560-905 S˜ao Carlos, SP, Brazil
E. Longo
Affiliation:
Departamento de Química, UFSCar, P.O. Box 676, 13560-905 S˜ao Carlos, SP, Brazil
J. A. Varela
Affiliation:
Instituto de Química, UNESP, P.O. Box 355, 14801-970 Araraquara, SP, Brazil
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Abstract

Polycrystalline SrBi2Nb2O9-layered ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrate using the polymeric precursors solution. The dip-coated films were specular and crack-free and crystallized during firing at 700 °C. Single-, double-, and triple-layered films were obtained by several dips in the deposition solution, and the influence of crystallization between each dip was studied. Microstructure and morphological evaluation were followed by grazing incident x-ray diffraction (GIXRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Multilayered films obtained using the intermediate-crystallized layer route present a dense microstructure with spherical grains, with a preferential orientation in the 〈215〉 direction; films obtained using the intermediate-amorphous layer route are polycrystalline and present elongated grains around 250 nm in size.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 3 , March 1999 , pp. 1026 - 1031
Copyright
Copyright © Materials Research Society 1999

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