Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-20T03:22:52.653Z Has data issue: false hasContentIssue false
  • English
  • Français

Indium tin oxide thin films prepared by thermal decomposition of ethylene glycol solution

Published online by Cambridge University Press:  31 January 2011

Osamu Yamamoto ,
Tadashi Sasamoto  and
Michio Inagaki
Osamu Yamamoto
Affiliation:
Department of Chemical Technology, Kanagawa Institute of Technology, 1030 Shimo-ogino, Atsugi-shi, 243-02 Japan
Tadashi Sasamoto
Affiliation:
Department of Chemical Technology, Kanagawa Institute of Technology, 1030 Shimo-ogino, Atsugi-shi, 243-02 Japan
Michio Inagaki
Affiliation:
Department of Applied Chemistry, Faculty of Engineering, Hokkaido University, Kita-Ku, Sapporo, 060 Japan
Get access

Abstract

Indium tin oxide (ITO) films were prepared on a glass substrate by thermal decomposition of ethylene glycol (EG) solutions which were prepared by dissolving indium and tin chlorides into ethylene glycol and then heating the solution at 200 °C. Homogeneous ITO film with a thickness of 1 μm without any cracks was obtained from the EG solution with a viscosity of about 50 cSt by spin coating, with the rotation of the substrate at 2000 rpm. The crystallization of the film thus obtained occurred above 400 °C. A well-crystallized ITO film was obtained by heat-treating at 600 °C. The resistivity of the ITO film obtained on a glass substrate showed a minimum value of 1.1 × 10−4 ohm cm at about 7 at.% Sn.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 9 , September 1992 , pp. 2488 - 2491
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Suzuki, K., Ogawa, H., Sato, S., and Kumada, A., Ouyo-Butsuri 44, 247 (1975). [in Japanese]Google Scholar
2.Kane, J. and Schwaezer, H. P., Thin Solid Films 29, 155 (1975).CrossRefGoogle Scholar
3.Hori, Y., Doi, K., and Uesawa, I., Ouyo-Butsuri 34, 507 (1965). [in Japanese]Google Scholar
4.Fan, J. C. C. and Bachner, F. J., J. Electrochem. Soc. 12, 1719 (1975).CrossRefGoogle Scholar
5.Buchanan, M., Webb, J. B., and Williams, D. F., Appl. Phys. Lett. 37, 213 (1980).CrossRefGoogle Scholar
6.Ogihara, S., Kinugawa, K., and Nagayama, M., Nippon Kagaku Kaishi 1980, 1343 (1980). [in Japanese]Google Scholar
7.Maruyama, T. and Tabata, K., Jpn. J. Appl. Phys. 29, L355 (1980).CrossRefGoogle Scholar
8.Ogihara, S. and Kinugawa, K., Yogyo-kyokai-Shi 90, 157 (1982).CrossRefGoogle Scholar
9.Tsunashima, A., Asai, T., Kodaira, K., and Matsushita, T., Chem. Lett. 855 (1978).CrossRefGoogle Scholar
10.Matsushita, T., Sekiya, T., and Yamai, I., Nippon Kagaku Kaishi 92, 880 (1972).CrossRefGoogle Scholar
11.Maruyama, T. and Kojima, A., Jpn. J. Appl. Phys. 10, L1829 (1988).CrossRefGoogle Scholar