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Improvement of the morphological stability of Ag film on (001)Si with a thin interposing Au layer

Published online by Cambridge University Press:  31 January 2011

Y. C. Peng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
C. R. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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Extract

The morphological stability of ultrahigh vacuum deposited Ag film on (001)Si has been drastically improved by the deposition of 1 to 5 nm thick interposing Au layers. In Ag/(001)Si samples, Ag islands were found to form after annealing at 200 °C for 1 h. In contrast, continuous and uniform metal layer persisted after annealing at 500 °C for 1 h in samples with a thin intermediate Au layer. The significantly improved morphological stability is attributed to the strong intermixing between Au and Ag atoms at the metal/Si interface. The intermixing lowers the interface energy between metal layer and (001)Si.

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Articles
Copyright
Copyright © Materials Research Society 1998

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