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Hydrothermal synthesis of heteroepitaxial Pb(ZrxTi1−x)O3 thin films at 90–150 °C

Published online by Cambridge University Press:  31 January 2011

A. T. Chien ,
J. S. Speck  and
F. F. Lange
A. T. Chien
Affiliation:
Materials Research Laboratory and Materials Department, University of California, Santa Barbara, California 93106
J. S. Speck
Affiliation:
Materials Research Laboratory and Materials Department, University of California, Santa Barbara, California 93106
F. F. Lange
Affiliation:
Materials Research Laboratory and Materials Department, University of California, Santa Barbara, California 93106
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Abstract

Pb(ZrxTi1−x)O3 and PbZrO3 heteroepitaxial thin films were produced in an aqueous solution (10 M KOH) at ambient pressure and low temperatures (90–150 °C) on (001) SrTiO3 and LaAlO3 single crystal substrates. Growth of the Pb(ZrxTi1−x)O3 and PbZrO3 thin films initiates by the formation of {100} faceted islands. Energy dispersive spectroscopy (EDS) analysis of the Pb(ZrxTi1−x)O3 thin film shows that the Zr: Ti ratio is 45: 56, nearly identical to the molar ratio of the precursors. This route might provide a viable low temperature alternative for the formation of high dielectric constant thin films for applications such as dynamic random access memory (DRAM).

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 5 , May 1997 , pp. 1176 - 1178
Copyright
Copyright © Materials Research Society 1997

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