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Hydrogen passivation of defect levels in the annealed CdZnTe:In crystals

Published online by Cambridge University Press:  16 October 2020

Lingyan Xu ,
Yan Zhou ,
Xu Fu ,
Lu Liang  and
Wanqi Jie
Lingyan Xu*
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi710072, China Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi710072, China
Yan Zhou
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi710072, China Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi710072, China
Xu Fu
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi710072, China Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi710072, China
Lu Liang
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi710072, China Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi710072, China
Wanqi Jie
Affiliation:
State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi710072, China Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi710072, China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

We investigated high-resistivity cadmium zinc telluride (CdZnTe):In single crystals annealed in hydrogen to reveal the passivation effect of defects. An overall reduction in the concentration of defect levels induced by annealing was obviously observed by thermally stimulated current measurements. There is a large decrease by 56.51% in the concentration of secondly ionized Cd vacancies (T3) after hydrogenation. The concentration of firstly ionized Cd vacancies (T2) was a little bit lower (17.99%) in the hydrogenated CZT crystals. The formation of neutral InH complex and lower occupation of VCd by In dopant would result in a significant decrease (68.31%) in the trap density of ${\rm In}_{\rm Cd}^ +$ related shallow donor (T1) after hydrogenation. The bulk resistivity was calculated from I–V characteristic curves to be ~1.97 × 1010 Ωcm before annealing and ~1.78 × 1010 Ωcm after annealing. Hall measurements also reveal n-type conduction for the hydrogenated crystals. Electron mobility was fitted to be about 110 cm2/Vs before annealing and 488 cm2/Vs after annealing, demonstrating better carrier transport properties. Electron mobility-lifetime product could be fitted to be about 3.60 × 10−4 cm2/V before annealing and 5.45 × 10−4 cm2/V after annealing, demonstrating better detector performances.

Keywords

semiconductorspassivationdefect trapscarrier transport properties
Type
Article
Information
Journal of Materials Research , Volume 35 , Issue 22 , 30 November 2020 , pp. 3041 - 3047
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Copyright
Copyright © The Author(s), 2020, published on behalf of Materials Research Society by Cambridge University Press

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References

Fiederle, M., Feltgen, T., Meinhardt, J., Rogalla, M., and Benz, K.: State of the art of (Cd, Zn) Te as gamma detector. J. Cryst. Growth 197, 635 (1999).CrossRefGoogle Scholar
Schlesinger, T.E., Toney, J.E., Yoon, H., Lee, E.Y., Brunett, B.A., Franks, L., and James, R.B.: Cadmium zinc telluride and its use as a nuclear radiation detector material. Mater. Sci. Eng. R 32, 103 (2001).CrossRefGoogle Scholar
Szeles, C.: CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications. Phys. Status Solidi B 241, 783 (2004).CrossRefGoogle Scholar
Zha, G., Yang, J., Xu, L., Feng, T., Wang, N., and Jie, W.: The effects of deep level traps on the electrical properties of semi-insulating CdZnTe. J. Appl. Phys. 115, 043715 (2014).CrossRefGoogle Scholar
Rudolph, P.: Non-stoichiometry related defects at the melt growth of semiconductor compound crystals – a review. Cryst. Res. Technol. 38, 542 (2003).CrossRefGoogle Scholar
Belas, E., Bugár, M., Grill, R., Horodyský, P., Feš, R., Franc, J., Moravec, P., Matěj, Z., and Höschl, P.: Elimination of inclusions in (CdZn) Te substrates by post-grown annealing. J. Electron. Mater. 36, 1025 (2007).CrossRefGoogle Scholar
Yu, P., Jie, W., and Wang, T.: Improvement of the quality of indium-doped CdZnTe single crystals by post-growth annealing for radiation detectors. CrystEngComm 13, 3521 (2011).CrossRefGoogle Scholar
Li, G., Zhang, X., Jie, W., and Hui, C.: Thermal treatment of detector-grade CdZnTe. J. Cryst. Growth 295, 31 (2006).CrossRefGoogle Scholar
Li, G., Zhang, X., Hua, H., and Jie, W.: Upgrading of CdZnTe by annealing with pure Cd and Zn metals. Semicond. Sci. Technol. 21, 392 (2006).CrossRefGoogle Scholar
Yu, P., Jie, W., and Wang, T.: Detector-grade CdZnTe: In crystals obtained by annealing. J. Mater. Sci. 46, 3749 (2011).CrossRefGoogle Scholar
Pearton, S.J., Corbett, J.W., and Shi, T.S.: Hydrogen in crystalline semiconductors. Appl. Phys. A Mater. Sci. Process 43, 153 (1987).CrossRefGoogle Scholar
Pan, N., Lee, B., Bose, S.S., Kim, M.H., Hughes, J.S., Stillman, G.E., Arai, K., and Nashimoto, Y.: SI donor neutralization in high-purity GAAS. Appl. Phys. Lett. 50, 1832 (1987).CrossRefGoogle Scholar
Mostefaoui, R., Chevallier, J., Jalil, A., Pesant, J.C., Tu, C.W., and Kopf, R.F.: Shallow donors and D-X centers neutralization by atomic-hydrogen in GAAIAS doped with silicon. J. Appl. Phys. 64, 207 (1988).CrossRefGoogle Scholar
Mergui, S., Hageali, M., Koebel, J.M., and Siffert, P.: Effect of hydrogen on high resistivity P-type CDTE. Nucl. Instrum. Methods Phys. Res. Sect. A Accel. Spectrom. Detect. Assoc. Equip. 322, 381 (1992).CrossRefGoogle Scholar
Sitharaman, S., Raman, R., Durai, L., Pal, S., Gautam, M., Nagpal, A., Kumar, S., Chatterjee, S.N., and Gupta, S.C.: Effect of hydrogenation on the electrical and optical properties of CdZnTe substrates and HgCdTe epitaxial layers. J. Cryst. Growth 285, 318 (2005).CrossRefGoogle Scholar
Pearton, S.J. and Tavendale, A.J.: The electrical-properties of deep copper-related and nickel-related centers in silicon. J. Appl. Phys. 54, 1375 (1983).CrossRefGoogle Scholar
Chevallier, J., Dautremontsmith, W.C., Tu, C.W., and Pearton, S.J.: Donor neutralization in GAAS(SI) by atomic-hydrogen. Appl. Phys. Lett. 47, 108 (1985).CrossRefGoogle Scholar
Dong, Y., Feenstra, R.M., Greve, D.W., Moore, J.C., Sievert, M.D., and Baski, A.A.: Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecular-beam epitaxy. Appl. Phys. Lett. 86, 121914 (2005).CrossRefGoogle Scholar
Singh, M. and Weber, J.: Shallow impurity neutralization in gap by atomic-hydrogen. Appl. Phys. Lett. 54, 424 (1989).CrossRefGoogle Scholar
Werthen, J.G., Haring, J.P., Fahrenbruch, A.L., and Bube, R.H.: Effects of surface preparation on the properties of metal CDTE junctions. J. Appl. Phys. 54, 5982 (1983).CrossRefGoogle Scholar
White, J., Pal, R., Dell, J.M., Musca, C.A., Antoszewski, J., Faraone, L., and Burke, P.: p-to-n type-conversion mechanisms for HgCdTe exposed to H-2/CH4 plasmas. J. Electron. Mater. 30, 762 (2001).CrossRefGoogle Scholar
Boieriu, P., Grein, C.H., Velicu, S., Garland, J., Fulk, C., Sivananthan, S., Stoltz, A., Bubulac, L., and Dinan, J.H.: Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si. Appl. Phys. Lett. 88, 062106 (2006).CrossRefGoogle Scholar
Pavlovic, M., Desnica, U.V., and Gladic, J.: Complete set of deep traps in semi-insulating GaAs. J. Appl. Phys. 88, 4563 (2000).CrossRefGoogle Scholar
Nan, R.H., Jie, W.Q., Zha, G.Q., Wang, T., Xu, Y.D., and Liu, W.H.: Investigation on defect levels in CdZnTe:Al using thermally stimulated current spectroscopy. J. Phys. D: Appl. Phys. 43, 345104 (2010).CrossRefGoogle Scholar
Fang, Z.Q., Look, D.C., and Zhao, J.: Traps in semi-insulating InP studied by thermally stimulated current spectroscopy. Appl. Phys. Lett. 61, 589 (1992).CrossRefGoogle Scholar
Soundararajan, R. and Lynn, K.G.: Effects of excess tellurium and growth parameters on the band gap defect levels in CdxZn1-xTe. J. Appl. Phys. 112, 073111 (2012).CrossRefGoogle Scholar
Xu, L.Y., Jie, W.Q., Zha, G.Q., Feng, T., Wang, N., Xi, S.Z., Fu, X., Zhang, W.L., Xu, Y.D., and Wang, T.: Effects of sub-bandgap illumination on electrical properties and detector performances of CdZnTe. Appl. Phys. Lett. 104, 232109 (2014).CrossRefGoogle Scholar
Francou, J., Saminadayar, K., and Pautrat, J.: Shallow donors in CdTe. Phys. Rev. B 41, 12035 (1990).CrossRefGoogle ScholarPubMed
Wei, S.-H. and Zhang, S.: Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe. Phys. Rev. B 66, 155211 (2002).CrossRefGoogle Scholar
Wang, T., Jie, W.Q., Zeng, D.M., Yang, G., Xu, Y.D., Liu, W.H., and Zhang, J.J.: Temperature dependence of photoluminescence properties of In-doped cadmium zinc telluride. J. Mater. Res. 23, 1389 (2008).CrossRefGoogle Scholar
Xu, L.Y., Jie, W.Q., Zhou, B.R., Fu, X., Zha, G.Q., Wang, T., Xu, Y.D., Feng, T., and Chen, X.: Effects of crystal growth methods on deep-level defects and electrical properties of CdZnTe:In crystals. J. Electron. Mater. 44, 518 (2015).CrossRefGoogle Scholar
Carvalho, A., Tagantsev, A., Öberg, S., Briddon, P., and Setter, N.: Cation-site intrinsic defects in Zn-doped CdTe. Phys. Rev. B 81, 075215 (2010).CrossRefGoogle Scholar
Chu, M., Terterian, S., Ting, D., Wang, C., Gurgenian, H., and Mesropian, S.: Tellurium antisites in CdZnTe. Appl. Phys. Lett. 79, 2728 (2001).CrossRefGoogle Scholar
Yu, P.F., Chen, Y.R., Song, J., Zhu, Y., Zhang, M.J., Zhang, B.G., Wang, Y., Li, W., Luan, L.J., Du, Y.Y., Ma, J., Zheng, J.H., Li, Z., Bai, M., Li, H., and Jie, W.Q.: Study of optical properties of high-resistivity CdMnTe:In single crystals before and after H-2 atmosphere annealing. Mater. Sci. Eng. B 246, 120 (2019).CrossRefGoogle Scholar
Biglari, B., Samimi, M., Hageali, M., Koebel, J.M., and Siffert, P.: Passivation of bulk trapping levels in cadmium telluride by proton implantation. J. Appl. Phys. 65, 1112 (1989).CrossRefGoogle Scholar
Gurumurthy, S., Bhat, H.L., Sundersheshu, B., Bagai, R.K., and Kumar, V.: Shallow donor neutralization in CdTe:In by atomic hydrogen. Appl. Phys. Lett. 68, 2424 (1996).CrossRefGoogle Scholar
Pankove, J.I., Zanzucchi, P.J., Magee, C.W., and Lucovsky, G.: Hydrogen localization near boron in silicon. Appl. Phys. Lett. 46, 421 (1985).CrossRefGoogle Scholar
Pantelides, S.T.: Effect of hydrogen on shallow dopants in crystalline silicon. Appl. Phys. Lett. 50, 995 (1987).CrossRefGoogle Scholar
Svob, L., Heurtel, A., and Marfaing, Y.: Neutralization of acceptor and donor impurities in hydrogenated CDTE. J. Cryst. Growth 86, 815 (1988).CrossRefGoogle Scholar
Bolotnikov, A.E., Camarda, G.C., Wright, G.W., and James, R.B.: Factors limiting the performance of CdZnTe detectors. IEEE Trans. Nucl. Sci. 52, 589 (2005).CrossRefGoogle Scholar
Castaldini, A., Cavallini, A., Fraboni, B., Fernandez, P., and Piqueras, J.: Midgap traps related to compensation processes in CdTe alloys. Phys. Rev. B 56, 14897 (1997).CrossRefGoogle Scholar