Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-26T11:06:08.865Z Has data issue: false hasContentIssue false
  • English
  • Français

High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7−δ metalorganic chemical vapor deposited thin films

Published online by Cambridge University Press:  31 January 2011

Ch. Grigis ,
S. Schamm  and
D. Dorignac
Ch. Grigis
Affiliation:
Centre d'Elaboration des Matériaux et d'Etudes Structurales, CEMES/CNRS, BP 4347, 31055 Toulouse cedex 04, France
S. Schamm
Affiliation:
Centre d'Elaboration des Matériaux et d'Etudes Structurales, CEMES/CNRS, BP 4347, 31055 Toulouse cedex 04, France
D. Dorignac
Affiliation:
Centre d'Elaboration des Matériaux et d'Etudes Structurales, CEMES/CNRS, BP 4347, 31055 Toulouse cedex 04, France
Get access

Abstract

New structural planar defects in Ba-deficient Y1Ba2Cu3O7−δ (YBCO) (1:1.6:3) thin films grown on NdGaO3 and SrTiO3 substrates by metalorganic chemical vapor deposition have been observed by means of high-resolution electron microscopy. The defects are associated with perturbations of the YBCO “1:2:3” stacking sequences along the c direction, which give rise to structural variants with locally “2:5:7,” “3:4:7,” or “4:6:10” cationic stoichiometries. The defects can be consistently interpreted as CuO–YO–CuO/CuO conversions or YO/BaO (BaO/YO) interconversions in the (a,b) planes and extending over a few nanometers along the c axis. Structural models based on image matching with simulations are proposed for two particular cases. It is thought that these structural imperfections can be effective sites of flux pinning.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 7 , July 1999 , pp. 2732 - 2738
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Civale, L., Marwick, A.D., McElfresh, M.W., Worthington, T.K., Malozemoff, A.P., Holtzberg, F., Thompson, J.R., and Kirk, M.A., Phys. Rev. Lett. 65, 1164 (1990).Google Scholar
2.van Dover, R.B., Gregory, E.M., White, , Schneemeyer, A.E., Felder, L.F., and Waszczak, J.V., Appl. Phys. Lett. 56, 2681 (1990).CrossRefGoogle Scholar
3.Schindler, W., Raos, B., Semann-Ischenko, G., Schultz, L., and Gerstenberg, H., Physica C 169, 117 (1990).CrossRefGoogle Scholar
4.Budhani, R.C., Suenaga, M., and Liou, S.H., Phys. Rev. Lett. 69, 3816 (1992).Google Scholar
5.Budhani, R.C., Zhu, Y., and Suenaga, M., Appl. Phys. Lett. 61, 985 (1992).CrossRefGoogle Scholar
6.Hardy, V., Grout, D., Provost, J., and Raveau, B., Physica C 190, 289 (1992).CrossRefGoogle Scholar
7.Zandbergen, H.W., Gronsky, R., Wang, K., and Thomas, G., Nature 331, 596 (1988).CrossRefGoogle Scholar
8.Gao, Y., Bai, G., Lam, D.J., and Merkle, K.L., Physica C 173, 487 (1991).CrossRefGoogle Scholar
9.Guo, Y.X., Hoier, R., Graf, T., and Fischer, O., Physica C 199, 435 (1992).CrossRefGoogle Scholar
10.Van Tendeloo, G., Krekels, T., and Amelinckx, S., Phil. Mag. Lett. 63(4), 189 (1991).Google Scholar
11.Yan, Y., Cardwell, D.A., Campbell, A.M., and Stobbs, W.M., J. Mater. Res. 11, 2990 (1996).CrossRefGoogle Scholar
12.Ramesh, R., Hwang, D.M., Barner, J.B., Nazar, L., Ravi, T.S., Inam, A., Dutta, B., Wu, X.D., and Venkatesan, T., J. Mater. Res. 5, 704 (1990).CrossRefGoogle Scholar
13.Ourmazd, A., Rentschler, J.A., Spence, J.C.H, O'Keefe, M., Graham, R.J., Johnson, D.W. Jr, and Rhodes, W.W., Nature 327, 308 (1987).CrossRefGoogle Scholar
14.Dravid, V.P., Zhang, H., Marks, L.D., and Zhang, J.P., Physica C 192, 31 (1992).Google Scholar
15.Dorignac, D., Schamm, S., Grigis, Ch., Sévely, J., Santiso, J., and Figueras, A., Physica C 235–240, 617 (1994).Google Scholar
16.Dorignac, D., Schamm, S., Grigis, Ch., Santiso, J., Garcia, G., and Figueras, A., J. Phys. IV C5, 927 (1995).Google Scholar
17.Dorignac, D., Schamm, S., Grigis, Ch., and Sévely, J., Proc. 13th International Congress on Electron Microscopy, edited by Jouffrey, B., Colliex, C., Chevalier, J.P., Glas, F., and Hawkes, P.W. (les éditions de Physique, 1994), Vol. 1, p. 927.Google Scholar
18.Lopez, J. and Figueras, A., J. Phys. IV C3, 353 (1993).Google Scholar
19.Tietz, L.A. and Carter, C.B., J. Mater. Res. 4, 1072 (1989).Google Scholar