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Highly conductive group VI transition metal dichalcogenide films by solution-processed deposition

Published online by Cambridge University Press:  18 July 2011

Wooseok Ki ,
Xiaoying Huang ,
Jing Li ,
David L. Young  and
Yong Zhang
Wooseok Ki
Affiliation:
Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey 08854
Xiaoying Huang
Affiliation:
Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey 08854
Jing Li*
Affiliation:
Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey 08854
David L. Young
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
Yong Zhang
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

A new soluble synthetic route was developed to fabricate thin films of layered structure transition metal dichalcogendies, MoS2 and WS2. High-quality thin films of the dichalcogenides were prepared using new soluble precursors, (CH3NH3)2MS4 (M = Mo, W). The precursors were dissolved in organic solvents and spun onto substrates via both single- and multistep spin coating procedures. The thin films were formed by the thermal decomposition of the coatings under inert atmosphere. Structural, electrical, optical absorption, thermal, and transport properties of the thin films were characterized. Surface morphology of the films was analyzed by atomic force microscopy and scanning electron microscopy. Highly conductive and textured n-type MoS2 films were obtained. The measured room temperature conductivity ∼50 Ω−1 cm−1 is substantially higher than the previously reported values. The n-type WS2 films were prepared for the first time using solution-processed deposition. WS2 displays a conductivity of ∼6.7 Ω−1 cm−1 at room temperature.

Keywords

Electrical propertiesFilmSolution deposition
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 5 , May 2007 , pp. 1390 - 1395
Copyright
Copyright © Materials Research Society 2007

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