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Growth of ternary Si1−x-yGexCy thin films from a single-source precursor, Ge(SiMe3)4

Published online by Cambridge University Press:  03 March 2011

Hsin-Tien Chiu ,
Ching-Shing Shie  and
Shiow-Huey Chuang
Hsin-Tien Chiu
Affiliation:
Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China
Ching-Shing Shie
Affiliation:
Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China
Shiow-Huey Chuang
Affiliation:
Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan 30050, Republic of China
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Abstract

Ge(SiMe3)4 was used as a single-source precursor to deposit thin films of alloys of germanium, silicon, and carbon, Si1−x-yGexCy, by low-pressure chemical vapor deposition on silicon substrates at temperatures 873-973 K. X-ray diffraction studies indicated that the films grown above 898 K were cubic phase (a = 0.441–0.442 nm). Infrared spectra of the films showed a major absorption near 783 cm−1. X-ray photoelectron spectra of a typical thin film showed binding energies of Ge3d, Si2p, and C1s electrons at 30.0, 100.6, and 283.2 eV, respectively. As determined by wavelength dispersive spectroscopy, x was 0.07–0.15 and y was 0.43–0.50, indicating that the films contained 7–15% Ge, 38–43% Si, and 43–50% C. At 973 K, the C/(Si + Ge) ratio was 1. Based on these data, the films deposited above 898 K have a structure of β-SiC with Ge atoms replacing some Si atoms in the lattice.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 9 , September 1995 , pp. 2257 - 2259
Copyright
Copyright © Materials Research Society 1995

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