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Growth of diamond and diamond-like films using a low energy ion beam

Published online by Cambridge University Press:  31 January 2011

Y. P. Guo ,
K. L. Lam ,
K. M. Lui ,
R. W. M. Kwok  and
K. C. Hui
Y. P. Guo
Affiliation:
Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong
K. L. Lam
Affiliation:
Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong
K. M. Lui
Affiliation:
Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, and Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong
R. W. M. Kwok
Affiliation:
Department of Chemistry, The Chinese University of Hong Kong, Shatin, and Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
K. C. Hui
Affiliation:
Department of Chemistry, The Chinese University of Hong Kong, Shatin, and Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong
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Abstract

Ion beam deposition provides an additional control of ion beam energy over the chemical vapor deposition methods. We have used a low energy ion beam of hydrogen and carbon to deposit carbon films on Si(100) wafers. We found that graphitic films, amorphous carbon films, and oriented diamond microcrystallites could be obtained separatedly at different ion beam energies. The mechanism of the formation of the oriented diamond microcrystallites was suggested to include three components: strain release after ion bombardment, hydrogen passivation of sp3 carbon, and hydrogen etching. Such a process can be extended to the heteroepitaxial growth of diamond films.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 8 , August 1998 , pp. 2315 - 2320
Copyright
Copyright © Materials Research Society 1998

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References

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