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Growth of CuInSe2 crystals in Cu-rich Cu–In–Se thin films

Published online by Cambridge University Press:  31 January 2011

Takahiro Wada ,
Naoki Kohara ,
Takayuki Negami  and
Mikihiko Nishitani
Takahiro Wada
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619–02, Japan
Naoki Kohara
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619–02, Japan
Takayuki Negami
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619–02, Japan
Mikihiko Nishitani
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619–02, Japan
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Abstract

A Cu-rich CuInSe2 (CIS) thin film with an atomic ratio of Cu/In = 3.6 was characterized using high-resolution and analytical transmission electron microscopy (TEM). The film was deposited on a Mo coated soda-lime glass substrate by physical vapor deposition. Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES) showed that a secondary impurity phase such as Cu2Se segregated on the CIS surface. The three-dimensional crystallographic relationship between the Cu2Se and CIS was found to be (111)Cu2Se (111)CIS and [011]Cu2Se || [011]CIS where the Cu2Se and CIS had pseudocubic structures with a = 5.8 Å and a = 11.6 Å, respectively. CuPt type CIS could be observed near the interface between the Cu2Se and CIS. A growth model of CIS crystals under Cu and Se excess condition is proposed based on the results of TEM. The characteristics of the CIS growth model in Cu-rich CIS film are summarized as follows: (i) CIS crystals are produced from Cu2Se crystals by a “topotactic reaction,” and (ii) sphalerite and/or CuPt type CIS are produced first after the reaction, and (iii) the metastable sphalerite and/or CuPt type CIS is then transformed to the stable chalcopyrite CIS phase.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 6 , June 1997 , pp. 1456 - 1462
Copyright
Copyright © Materials Research Society 1997

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