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Growth kinetics of high Tc phase in Bi–Sr–Ca–Cu–O thick films

Published online by Cambridge University Press:  31 January 2011

Sangeeta Chaudhry ,
Neeraj Khare  and
A.K. Gupta
Sangeeta Chaudhry
Affiliation:
National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi-110012, India
Neeraj Khare
Affiliation:
National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi-110012, India
A.K. Gupta
Affiliation:
National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi-110012, India
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Abstract

Thick films of Bi–Sr–Ca–Cu–O on (100) MgO substrates have been prepared by the screen printing technique with the starting composition of 1112. The annealing process involves a two-step heat treatment. The first-step temperature is chosen between 874 °C and 898 °C for 45 min followed by slow cooling (2 °C/min) to 864 °C. In the second step, the films are kept at 864 °C for a time varying from 0 to 104 h. The Tc (R = 0) and intensity of the characteristic peaks of the high Tc and the low Tc phases in the x-ray diffraction pattern are found to be dependent on the first-step temperature and the duration of the second step. The process of crystallization and the growth of plate-like grains as a function of annealing time at the second step are studied using Scanning Electron Microscopy (SEM). Kinetics of the growth of the high Tc phase has been explained in terms of a reaction mechanism involving the first and second annealing steps.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 8 , August 1992 , pp. 2027 - 2034
Copyright
Copyright © Materials Research Society 1992

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