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Growth defects in CuInSe2 thin films

Published online by Cambridge University Press:  03 March 2011

Takahiro Wada ,
Takayuki Negami  and
Mikihiko Nishitani
Takahiro Wada
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka 570, Japan
Takayuki Negami
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka 570, Japan
Mikihiko Nishitani
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka 570, Japan
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Abstract

CuInSe2 thin film solar cells with an efficiency of about 10% were studied with a cross-sectional high resolution transmission electron microscope (HRTEM). The growth defects such as twins, stacking faults, and intergrowth phase in the CuInSe2 thin films were studied in detail. Polycrystalline CuInSe2 films were deposited on a Mo-coated glass substrate by using the three source evaporation system. The CuInSe2 film contains fivefold multiply twinned crystallites as well as a high density of twins in the {112} plane. The CuInSe2 film also contains intergrowth phase with a long range of periodicities of 10 Å parallel to the [112] direction of the chalcopyrite structure. The intergrowth phase composition is similar to the chalcopyrite phase. The structural model of the intergrowth phase is proposed on the basis of the high resolution electron micrograph.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 3 , March 1994 , pp. 658 - 662
Copyright
Copyright © Materials Research Society 1994

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References

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