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Growth by molecular beam epitaxy of (rare-earth group V element)/III-V semiconductor heterostructures

Published online by Cambridge University Press:  03 March 2011

A. Guivarc'h*
Affiliation:
FRANCE TELECOM, Centre National d'Etudes des Télécommunications, CNET/LAB, BP 40, F 22301 Lannion, France
A. Le Corre
Affiliation:
FRANCE TELECOM, Centre National d'Etudes des Télécommunications, CNET/LAB, BP 40, F 22301 Lannion, France
P. Auvray
Affiliation:
FRANCE TELECOM, Centre National d'Etudes des Télécommunications, CNET/LAB, BP 40, F 22301 Lannion, France
B. Guenais
Affiliation:
FRANCE TELECOM, Centre National d'Etudes des Télécommunications, CNET/LAB, BP 40, F 22301 Lannion, France
Y. Ballini
Affiliation:
FRANCE TELECOM, Centre National d'Etudes des Télécommunications, CNET/LAB, BP 40, F 22301 Lannion, France
R. Gúcrin
Affiliation:
Laboratoire de Chimie du Solide et Inorganique Moléculaire, UA CNRS 1495, Campus de Beaulieu, F 35042 Rennes, France
S. Députier
Affiliation:
Laboratoire de Chimie du Solide et Inorganique Moléculaire, UA CNRS 1495, Campus de Beaulieu, F 35042 Rennes, France
M.C. Le Clanche
Affiliation:
Laboratoire de Chimie du Solide et Inorganique Moléculaire, UA CNRS 1495, Campus de Beaulieu, F 35042 Rennes, France
G. Jézéquel
Affiliation:
Laboratoire de Spectroscopie du Solide, Bât. 11C, URA CNRS 1202, Campus de Beaulieu, F 35042 Rennes, France
B. Lépine
Affiliation:
Laboratoire de Spectroscopie du Solide, Bât. 11C, URA CNRS 1202, Campus de Beaulieu, F 35042 Rennes, France
A. Quémerais
Affiliation:
Laboratoire de Spectroscopie du Solide, Bât. 11C, URA CNRS 1202, Campus de Beaulieu, F 35042 Rennes, France
D. Sébilleau
Affiliation:
Laboratoire de Spectroscopie du Solide, Bât. 11C, URA CNRS 1202, Campus de Beaulieu, F 35042 Rennes, France
*
a)Permanent address: Laboratoire de Spectroscopie du Solide, Bât. 11C, URA CNRS 1202, Campus de Beaulieu, F 35042 Rennes, France.
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Abstract

This paper deals with the growth by molecular beam epitaxy of semimetallic (rare-earth group V element) compounds on III-V semiconductors. Results are presented, first on the Er-Ga-As and Er-Ga-Sb ternary phase diagrams, second on the lattice-mismatched ErAs/GaAs (δa ≈ +1.6%), YbAs/GaAs (δa/a = +0.8%), and ErSb/GaSb (δa/a ≈ +0.2%) heterostructures, and third on the lattice-matched Sc0.3Er0.7As/GaAs and Sc0.2Yb0.8As/GaAs systems (δa/a < 0.05%). Finally the growth of YbSb2 on GaSb(001) is reported. The studies made in situ by reflection high-energy electron diffraction (RHEED) and x-ray photoelectron diffraction and ex situ by x-ray diffraction, transmission electron microscopy, He+ Rutherford backscattering, and photoelectron spectroscopy are presented. We discuss the atomic registry of the epitaxial layers with respect to the substrates, the appearance of a mosaic effect in lattice-mismatched structures, and the optical and electrical properties of the semimetallic films. The problems encountered for III-V overgrowth on these compounds (lack of wetting and symmetry-related defects) are commented on, and we underline the interest of compounds as YbSb2 which avoid the appearance of inversion defects in the GaSb overlayers.

Type
Articles
Copyright
Copyright © Materials Research Society 1995

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References

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