Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-26T18:13:11.739Z Has data issue: false hasContentIssue false

Growth and ultraviolet optical properties of KGd1–xREx(WO4)2 single crystals

Published online by Cambridge University Press:  31 January 2011

M. C. Pujol
Affiliation:
Laboratori de Física Aplicada i Cristal.lografia, Universitat Rovira i Virgili, 43005 Tarragona, Spain
R. Solé
Affiliation:
Laboratori de Física Aplicada i Cristal.lografia, Universitat Rovira i Virgili, 43005 Tarragona, Spain
Jna. Gavaldà
Affiliation:
Laboratori de Física Aplicada i Cristal.lografia, Universitat Rovira i Virgili, 43005 Tarragona, Spain
J. Massons
Affiliation:
Laboratori de Física Aplicada i Cristal.lografia, Universitat Rovira i Virgili, 43005 Tarragona, Spain
M. Aguiló
Affiliation:
Laboratori de Física Aplicada i Cristal.lografia, Universitat Rovira i Virgili, 43005 Tarragona, Spain
F. Díaz
Affiliation:
Laboratori de Física Aplicada i Cristal.lografia, Universitat Rovira i Virgili, 43005 Tarragona, Spain
V. Nikolov
Affiliation:
Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, 1040 Sofia, Bulgaria
C. Zaldo
Affiliation:
Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco, 28049 Madrid, Spain
Get access

Abstract

The suitable conditions for growth of KGd(WO4)2 (KGW) and KGd1–xREx(WO4)2— RE = Nd, Er, Yb, Ho, Tm, Pr—by the top-seeded-solution-growth method, using K2W2O7 as solvent, are discussed. The relation between crystal size, mean growth rate, distribution coefficient of the substituting element, and the presence of macrodefects is analyzed. The optical absorption corresponding to the band-gap transition of KGW has been found to be temperature dependent; the absorption threshold energy changes from 34405 cm−1 at 300 K to 35330 cm−1 at 7 K. Narrow pre-edge absorption bands at about 32000 and 32600 cm−1 have been ascribed to Gd3+ intraconfigurational transitions. The photoluminescence of most RE3+ ions has been observed under ultraviolet (UV) excitation close to the absorption threshold of KGW. This suggests the contribution of charge transfer bands. In Pr-doped samples the presence of a minor concentration of Pr4+ could also contribute in this region. The irradiation with UV light does not introduce any significant coloration of our samples.

Type
Articles
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Kaminskii, A.A., Ann. Phys. Fr. 16, 639706 (1991).CrossRefGoogle Scholar
2.Kushawaha, V., Banerjee, A., and Major, L., Appl. Phys. B. 56, 239242 (1993).CrossRefGoogle Scholar
3.Chen, Y., Major, L., and Kushawaha, V., Appl. Opt. 35, 32033206 (1996).CrossRefGoogle Scholar
4.Musset, O. and Bouquillon, J.P., Appl. Phys. B. 64, 503506 (1997).CrossRefGoogle Scholar
5.Kaminskii, A., Li, L., Butashin, A.V., Mironov, V.S., Pavlyuk, A.A., Bagayev, S.N., and Ueda, K., Jpn. J. Appl. Phys. 36, L107–L109 (1997).CrossRefGoogle Scholar
6.Mochalov, I.V., J. Opt. Technol. 62, 746755 (1995).Google Scholar
7.Wang, G., Luo, Z., J. Cryst. Growth. 116, 505506 (1992).CrossRefGoogle Scholar
8.Tu, C., Huang, Y., Luo, Z., and Chen, G., J. Cryst. Growth. 135, 636638 (1994).CrossRefGoogle Scholar
9.Solé, R., Nikolov, V., Ruiz, X., Gavalda, Jna., Solans, X., Aguiló, M., and Díaz, F., J. Cryst. Growth. 169, 600603 (1996).CrossRefGoogle Scholar
10.Nikolov, V., Iliev, K., and Peshev, P., J. Cryst. Growth. 89, 313323 (1988).CrossRefGoogle Scholar
11.Nikolov, V., Iliev, K., and Peshev, P., J. Cryst. Growth. 89, 324330 (1988).CrossRefGoogle Scholar
12.Pujol, M.C., Rico, M., Zaldo, C., Solé, R., Nikolov, V., Solans, X., Aguiló, M., and Díaz, F., Appl. Phys. B. 68, 187 (1999).CrossRefGoogle Scholar
13.Kaminskii, A.A. (private communication).Google Scholar
14.Tsuboi, T., J. Phys. Cond. Matter. 10, 91559159 (1998).CrossRefGoogle Scholar
15.Seeger, K., Semiconductor Physics. An Introduction (SpringerVerlag, Berlin, 1991), p. 313.Google Scholar
16.Kunz, M., Kretschmanm, H., Assmuss, W., and Klingshirn, C., J. Lum. 37, 123 (1987).CrossRefGoogle Scholar
17.Henderson, B. and Imbusch, G.F., Optical Spectroscopy of Inorganic Solids (Oxford Science Publications, Clarendon Press, Oxford, 1989), p. 404.Google Scholar