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Friction and wear of argon-implanted silicon crystals

Published online by Cambridge University Press:  03 March 2011

J. Lekki
Affiliation:
Institute of Nuclear Physics, Cracow, Poland
Z. Stachura
Affiliation:
Institute of Nuclear Physics, Cracow, Poland
N. Preikschas
Affiliation:
Institute of Nuclear Physics, Münster, Germany
B. Cleff
Affiliation:
Institute of Nuclear Physics, Münster, Germany
M. Cholewa
Affiliation:
Micro Analytical Research Centre, School of Physics, The University of Melbourne, Australia
G.J.F. Legge
Affiliation:
Micro Analytical Research Centre, School of Physics, The University of Melbourne, Australia
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Abstract

Silicon 〈111〉 single crystals were implanted with 70 keV Ar ions to the dose of 1017 ions/cm2. Next, the friction coefficient between a Si crystal and a hard steel ball was measured using a pin-on-disk setup in air and in vacuum. The wear tracks were measured using a surface profilometer. For measurements performed in vacuum, a strong influence of implantation on friction force and wear tracks was found. The microstructure of the samples was subsequently investigated using RBS, ERD, and x-ray diffraction (XRD) techniques. Micro-RBS measurements showed that Ar had been removed from the wear tracks, despite their continued exhibition of low friction.

Type
Articles
Copyright
Copyright © Materials Research Society 1994

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References

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