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Formation and microstructural development of TiSi2 in (111)Si by Ti ion implantation and annealing at 950 °C

Published online by Cambridge University Press:  03 March 2011

S. Jin ,
M. Aindow ,
Z. Zhang  and
L.J. Chen
S. Jin*
Affiliation:
Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, P.O. Box 2724, Beijing 100080, and National Laboratory of Materials Surface Modification, Dalian University of Science and Technology, Dalian 116024, China
M. Aindow
Affiliation:
Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, P.O. Box 2724 Beijing 100080, China, and School of Metallurgy and Materials and IRC in Materials for High Performance Applications. The University of Birmingham, Edgbaston, B15 2TT, United Kingdom
Z. Zhang
Affiliation:
Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, P.O. Box 2724, Beijing 100080, China
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taibei, China
*
a)Please address all correspondence to this author.
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Abstract

A transmission electron microscopy study of the microstructural development for (111)Si wafers implanted with Ti ions and annealed subsequently at 950 °C is presented. The as-implanted wafers have a Ti-rich amorphous layer at the surface with embedded silicides, which correspond to a crystalline form of TiSi2 that has not been reported previously. Below this lies a Ti-lean crystalline layer with extensive radiation damage. The annealed layers have large incoherent islands of C54 TiSi2, with a layered microstructure in the Si between them consisting of twins, then topotaxial silicides, then dislocation loops. It is proposed that this microstructure arises from silicide growth prior to epitaxial regrowth, whereas for the continuous epitaxial films observed previously at lower annealing temperatures, epitaxial regrowth precedes silicide development.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 4 , April 1995 , pp. 891 - 899
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1Ting, C. Y., Lyer, S. S., Osburn, C. M., Hu, G. I., and Schweighart, A. M., in VLSI in Science and Technology, edited by Dell'Oca, C. and Bullis, W. M. (Electrochemical Society, Pennington, NJ, 1982), p. 213.Google Scholar
2Alperin, M. E., Hollaway, T. C., Haken, R. A., Gosmeyer, CD., Karnaugh, R. V., and Parmantie, W. D., IEEE Solid-State Circuits 61, SC-20 (1985).Google Scholar
3Nicolet, M. A. and Lau, S. S., in Materials and Process Characterization, edited by Einspruch, N. G. and Larrabee, G. B. (Academic, New York, 1983), p. 329.CrossRefGoogle Scholar
4Fung, M. S., Cheng, H. C., and Chen, L. J., Appl. Phys. Lett. 47, 1312 (1985).Google Scholar
5Chen, L. J. and Tu, K. N., Mater. Sci. Rep. 6, 53 (1991).CrossRefGoogle Scholar
6Cheng, J. Y., Cheng, H. C., and Chen, L. J., J. Appl. Phys. 62, 3722 (1987).CrossRefGoogle Scholar
7Mantl, S., Mater. Sci. Rep. 8, 1 (1992).CrossRefGoogle Scholar
8Jin, S., Lin, J. H., Chen, L. J., Shi, W. D., and Zhang, Z., Nucl. Instrum. Methods (1995, in press).Google Scholar
9Jin, S., Wen, X. Y., and Zhang, Z., Thin Solid Films 249, 50 (1994).Google Scholar
10Maher, D. M. and Eyre, B. L., Philos. Mag. 23, 409 (1971).CrossRefGoogle Scholar
11Ion Implantation Science and Technology, edited by Ziegler, J. F., 2nd ed. (Academic, Boston, 1988).Google Scholar
12Poate, J. M. and Williams, J. S., in Ion Implantation and Beam Processing, edited by Williams, J. S. and Poate, J. M. (Academic, Sydney, 1984), p. 14.Google Scholar
13See, for example, Martin, J. W. and Doherty, R. D., Stability of Microstructure in Metallic Systems (Cambridge University Press, Cambridge, 1976), Chap. 4.Google Scholar