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Experimental study of atmospheric pressure chemical vapor deposition of silicon carbide from methyltrichlorosilane

Published online by Cambridge University Press:  31 January 2011

George D. Papasouliotis  and
Stratis V. Sotirchos
George D. Papasouliotis
Affiliation:
Department of Chemical Engineering, University of Rochester, Rochester, New York 14627
Stratis V. Sotirchos*
Affiliation:
Department of Chemical Engineering, University of Rochester, Rochester, New York 14627 and Institute of Chemical Engineering and High Temperature Chemical Processes, P.O. Box 1414, 26500 Patras, GREECE
*
b) Address all correspondence to this author.
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Abstract

A comprehensive study of the chemical vapor deposition of SiC from methyltrichlorosilane at atmospheric pressure was conducted in this study; its main objectives were to identify the range of operating parameters in which stoichiometric SiC could be deposited and the generation of reliable kinetic data that could be used for the design of atmospheric pressure processes of chemical vapor deposition or chemical vapor infiltration of SiC. Deposition experiments were conducted in a hot-wall, cylindrical reactor at temperature ranging from 1273 to 573 K on flat graphite substrates or thin molybdenum wires aligned with the axis of the reactor. The obtained results showed that the deposition rate and the deposit stoichiometry varied markedly with the distance from the entrance of the reactor. The deposition rate exhibited, depending on the reaction temperature, one or two pronounced maxima before the beginning of the isothermal zone of the reaction, whereas the deposit stoichiometry showed an abrupt transition from almost silicon to stoichiometric silicon carbide after the first maximum. Experiments with HCl added in the feed showed that the presence of HCl could cause complete suppression of the deposition of silicon and lead to smoother variation of the SiC deposition rate with the residence time in the reactor. It is believed that this effect could be exploited to improve the uniformity of SiC deposition in chemical vapor deposition reactors or in the interior of porous preforms.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 8 , August 1999 , pp. 3397 - 3409
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Fitzer, E. and Kehr, D., Thin Solid Films 39, 55 (1976).CrossRefGoogle Scholar
2.Powell, J.A. and Matus, L.G., in Amorphous and Crystalline Silicon Carbide, edited by Harris, G.L. and Yang, C.Y-W., (Springer Proc. Phys., Springer-Verlag, Berlin, 1989), Vol. 34, p. 2.Google Scholar
3.Schlichting, J., Powder Metall. Int. 12, 141 and 196 (1980).Google Scholar
4.Fuentes, R.I., Chemistry and Industry 21, 806 (1992).Google Scholar
5.Buljan, S.T., Pesto, A.E., and Kim, H.J., Am. Ceram. Soc. Bull. 68, 387 (1989).Google Scholar
6.Chawla, K.K., Ceramic Matrix Composites (Chapman & Hall, London, 1993).Google Scholar
7.Mecholsky, J.J. Jr, Am. Ceram. Soc. Bull. 68, 367 (1989).Google Scholar
8.Pierson, H.O., Handbook of Chemical Vapor Deposition (Noyes Publications, NJ, 1992).Google Scholar
9.Minato, K. and Fukuda, K., J. Nuclear Mat. 149, 233 (1987).CrossRefGoogle Scholar
10.Naslain, R., Rossignol, J.Y., Hagenmuller, P., Christin, F., Heraud, L., and Choury, J.J., Rev. Chim. Minerale 18, 544 (1981).Google Scholar
11.Roman, Y.G., Stinton, D.P., and Besmann, T.M., J. de Physique 1, C2–689 (1991).Google Scholar
12.Besmann, T.M., Sheldon, B.W., Lowden, R.A., and Stinton, D.P., Science 253, 1104 (1991).Google Scholar
13.Sugiyama, K. and Yamamoto, E., J. Mat. Sci. 24, 3756 (1989).CrossRefGoogle Scholar
14.Sotirchos, S.V., AIChE Journal 37, 1356 (1991).Google Scholar
15.Ofori, J.Y. and Sotirchos, S.V., J. Mat. Res. 11, 2541 (1996).CrossRefGoogle Scholar
16.Ofori, J.Y. and Sotirchos, S.V., J. Electrochem. Soc. 144, 274 (1997).CrossRefGoogle Scholar
17.Ofori, J.Y. and Sotirchos, S.V., AIChE J. 42, 2828 (1996).CrossRefGoogle Scholar
18.Griffiths, S.K. and Nilson, R.H., J. Electrochem. Soc. 145, 1263 (1998).CrossRefGoogle Scholar
19.Papasouliotis, G.D. and Sotirchos, S.V., in Gas-Phase and Surface Chemistry in Electronic Materials Processing, edited by Mountziaris, T.J., Paz-Pujalt, G.R., Smith, F.T.J, and Westmoreland, P.R. (Mater. Res. Soc. Symp. Proc. 308, Pittsburgh, PA, 1994), p. 111.Google Scholar
20.Neuschütz, D. and Salehomoum, F., in Chemical Vapor Deposition of Refractory Metals and Ceramics II, edited by Besmann, T.M., Gallois, B.M., and Warren, J.W. (Mater. Res. Soc. Symp. Proc. 250, Pittsburgh, PA, 1992), p. 41.Google Scholar
21.Brütsch, R., Thin Solid Films 126, 313 (1985).CrossRefGoogle Scholar
22.Besmann, T.M. and Johnson, M.L., Proceedings of 3rd International Symposium on Ceramic Materials and Components for Engines (Las Vegas, NE, 1988), p. 443.Google Scholar
23.Christin, F., Naslain, R., and Bernard, C., Proceedings of the 7th International Conference on Chemical Vapor Deposition, PV 79–3 (Electrochemical Society, Pennington, NJ, 1979), p. 499.Google Scholar
24.Loumagne, F., Ph.D. Thesis, University of Bordeaux I, Bordeaux, France (1993).Google Scholar
25.Papasouliotis, G.D., Ph.D. Thesis, University of Rochester, Rochester, NY (1997).Google Scholar
26.Papasouliotis, G.D. and Sotirchos, S.V., J. Electrochem. Soc. 142, 3834 (1995).Google Scholar
27.Brennfleck, K., Fitzer, E., Schoch, G., and Dietrich, M., Proceedings of the 9th International Conference on Chemical Vapor Deposition, PV 84–6 (Electrochemical Society, Pennington, NJ, 1984), p. 64.Google Scholar
28.Papasouliotis, G.D. and Sotirchos, S.V., in Chemical Vapor Deposition 1996, CVD-XIII, edited by Besmann, T.M., Allendorf, M.D., Robinson, McD., and Ulrich, R.K., PV 96–5 (Proc. Electrochem. Soc., Pennington, NJ, 1996), p. 645.Google Scholar
29.Papasouliotis, G.D. and Sotirchos, S.V., J. Electrochem. Soc. (1998, in press).Google Scholar
30.Papasouliotis, G.D. and Sotirchos, S.V., J. Adv. Mater. Chem. Vapor Deposition (1998, in press).Google Scholar
31.Papasouliotis, G.D. and Sotirchos, S.V., J. Electrochem. Soc. 141, 1599 (1994).Google Scholar
32.Yeheskel, J., Agam, S., and Dariel, M.S., in Chemical Vapor Deposition/1990, CVD-XI, edited by Spear, K.E. and Gullen, G.W., PV 90–12 (Proc. Electrochem. Soc., Pennington, NJ, 1990), p. 696.Google Scholar
33.Ivanova, M.L. and Pletyushkin, A.A., Inorganic Mater. 4, 957 (1968).Google Scholar
34.Jonas, S., Ptak, W.S., Sadowski, W., Walasek, E., and Paluszkiewicz, C., J. Electrochem. Soc. 142, 2357 (1995).CrossRefGoogle Scholar
35.Burgess, J.N. and Lewis, T.J., Chemistry and Industry 76 (1974).Google Scholar
36.Stinespring, C.D. and Wormhoudt, J.C., J. Appl. Phys. 65, 1733 (1989).CrossRefGoogle Scholar
37.Brennfleck, K. and Reich, H., J. de Physique IV 1, C2–467 (1991).Google Scholar
38.Ohshita, Y., Ishitani, A., and Takada, T., J. Cryst. Growth 108, 499 (1991).Google Scholar
39. JANAF Thermochemical Tables, edited by M.W. Chase, Jr, C.A. Davies, J.R. Downey, Jr, D.J. Frurip, R.A. McDonald, and A.N. Syverud, J. Phys. Chem. Ref. Data, 14, Suppl. 1, 3rd ed. (1985).Google Scholar
40.Allendorf, M.D. and Melius, C.F., J. Phys. Chem. 97, 720 (1993).CrossRefGoogle Scholar
41.Marra, J.E., Kreidler, E.R., Jacobson, N.S., and Fox, D.S., J. Am. Ceram. Soc. 71, 1067 (1988).CrossRefGoogle Scholar
42.Balooch, M. and Olander, D.R., Surf. Sci. 261, 321 (1992).CrossRefGoogle Scholar
43.Park, D.S., McNallan, M.J., Park, C., and Liang, W.W., J. Am. Ceram. Soc. 73, 1323 (1990).Google Scholar
44.Besmann, T.M., Sheldon, B.W., Moss, T.M. III, and Kaster, M.D., J. Am. Ceram. Soc. 75, 2899 (1992).CrossRefGoogle Scholar
45.Delhaes, C. and Neuschütz, D., in Chemical Vapor Deposition of Refractory Metals and Ceramics III, edited by Lee, W.Y., Gallois, B.M., and Pickering, M.A. (Mater. Res. Soc. Symp. Proc. 363, Pittsburgh, PA, 1995), p. 63.Google Scholar
46.Besmann, T.M., Sheldon, B.W., and Kaster, M.D., Surf. Coat. Technol. 43, 167 (1990).Google Scholar
47.van Kemenade, A.W.C. and Stemfoort, C.F., J. Cryst. Growth 12, 13 (1972).Google Scholar
48.Ivanova, L.M. and Pletyushkin, A.A., Inorg. Mater. 3, 1585 (1967).Google Scholar
49.Choi, B.J. and Kim, D.R., J. Mat. Sci. Let. 10, 860 (1991).CrossRefGoogle Scholar
50.Cheng, D.J., Shyy, W.J., Kuo, D.H., and Hon, M.H., J. Electrochem. Soc. 134, 3145 (1987).CrossRefGoogle Scholar
51.Langlais, F., Prebende, C., Tarride, B., and Naslain, R., J. de Physique 50, C5–93 (1990).Google Scholar
52.Chin, J., Gantzel, P.K., and Hudson, R.G., Thin Solid Films 40, 57 (1977).CrossRefGoogle Scholar
53.Kingon, A.I., Lutz, L.J., Liaw, P., and Davis, R.F., J. Am. Ceram. Soc. 66, 558 (1983).CrossRefGoogle Scholar
54.Yeshekel, J. and Dariel, M.S., J. Am. Ceram. Soc. 78, 229 (1995).CrossRefGoogle Scholar
55.Davis, R.F., in Chemical Vapor Deposition of Refractory Metals and Ceramics, edited by Besmann, T.M. and Gallois, B.M. (Mater. Res. Soc. Symp. Proc. 168, Pittsburgh, PA 1990), p. 145.Google Scholar
56.Blocher, J.M. Jr, J. Vac. Sci. Technol. 11, 680 (1974).Google Scholar
57.Cartwright, B.S. and Popper, P., Proceedings of the 5th International Conference on Science of Ceramics, edited by Brosset, C. and Knopp, E. (Swedish Institute of Silicate Research, Gothenburg, Sweden, 1970), p. 473.Google Scholar
58.Gao, F. and Lin, R.Y., Proc. of Adv. Mat. 4, 13 (1994).Google Scholar