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Excimer laser-induced doping of crystalline silicon carbide films

Published online by Cambridge University Press:  03 March 2011

S. Krishnan ,
G.C. D'Couto ,
M.I. Chaudhry  and
S.V. Babu
S. Krishnan*
Affiliation:
Center for Advanced Materials Processing and Department of Chemical Engineering, Clarkson University, Potsdam, New York 13699
G.C. D'Couto*
Affiliation:
Center for Advanced Materials Processing and Department of Chemical Engineering, Clarkson University, Potsdam, New York 13699
M.I. Chaudhry*
Affiliation:
Department of Electrical Engineering and Computer Engineering, Clarkson University Potsdam, New York 13699
S.V. Babu
Affiliation:
Center for Advanced Materials Processing and Department of Chemical Engineering, Clarkson University, Potsdam, New York 13699
*
a)Now with Ultra Clean Technology, 150 Independence Drive, Menlo Park, California 94025.
b)Now with Praxair Corp., White Plains, New York.
c)Now with CHEMI Laboratories, Watervliet, New York 12189.
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Abstract

0.25 μm thick, single crystal, n-type, silicon carbide (β-SiC) films thermally grown on p-type Si(100) were doped with boron by using KrF excimer laser radiation and a spin-on dopant with a boron concentration of 1020/cm3. The threshold fluence for the doping to occur was approximately 0.08 J/cm2. Similarly, p-SiC/n-SiC diodes were fabricated by laser-induced doping of single-crystal β-SiC (n-type, 6 μm thick) films on n-type Si(100). The diodes obtained at 0.25 J/cm2 showed good rectifying characteristics. The threshold fluence for surface modification and/or ablation was approximately 0.3 J/cm2, indicating that doping and diode formation have to be accomplished within the fluence window of 0.08 J/cm2-0.3 J/cm2 for these films.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 11 , November 1995 , pp. 2723 - 2727
Copyright
Copyright © Materials Research Society 1995

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References

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