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Epitaxy and defects in laser-irradiated, single-crystal bismuth

Published online by Cambridge University Press:  31 January 2011

Aubrey L. Helms Jr. ,
Clifton W. Draper ,
Dale C. Jacobson ,
John M. Poate  and
Steven L. Bernasek
Aubrey L. Helms Jr.
Affiliation:
AT & T Engineering Research Center, P.O. Box 900, Princeton, New Jersey 08540
Clifton W. Draper
Affiliation:
AT & T Engineering Research Center, P.O. Box 900, Princeton, New Jersey 08540
Dale C. Jacobson
Affiliation:
AT & T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
John M. Poate
Affiliation:
AT & T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
Steven L. Bernasek
Affiliation:
Department of Chemistry, Frick Chemical Laboratory, Princeton University, Princeton, New Jersey 08544
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Abstract

The (0001), (1010), and (2110) faces of Bi have been pulsed laser irradiated at 0.5–0.8 J/cm2 with a Q-switched ruby laser. Nomarski interference contrast microscopy, channeling, and selective chemical etching have been used to investigate the response of the material to the laser irradiation. The response of Bi is shown to be strongly orientation dependent. The χmin and half-angle for the Bi (0001) surface have been measured and compared to theoretical values. The Bi(0001) surface has been shown to regrow epitaxially without an increase in the disorder. In contrast, the epitaxial regrowth of the Bi(1010) and Bi(2110) surfaces show a marked increase in disorder after irradiation. The levels of damage show a strong correlation to the critical resolved shear stress characteristics in the particular crystallographic orientation studied.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1097 - 1103
Copyright
Copyright © Materials Research Society 1988

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