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Epitaxial growth of β–SiC thin films on a 6H–SiC substrate using the chemical solution deposition method

Published online by Cambridge University Press:  31 January 2011

D. Heimann ,
T. Wagner ,
J. Bill ,
F. Aldinger  and
F. F. Lange
D. Heimann
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, 70174 Stuttgart, Germany
T. Wagner
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, 70174 Stuttgart, Germany
J. Bill
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, 70174 Stuttgart, Germany
F. Aldinger
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, 70174 Stuttgart, Germany
F. F. Lange
Affiliation:
Materials Department, University of California, Santa Barbara, California 93106
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Abstract

A polyvinylmethylsilane precursor has been used for the epitaxial growth of SiC thin films on 6H–SiC single crystal substrates. The films were prepared by dipping the single crystal 6H–SiC substrates into the precursor polymer solution with subsequent thermal treatments at different temperatures. Transmission electron microscopy (TEM) was used to characterize the microstructure and chemistry of the different SiC films. At 1100 °C, the film was amorphous and contained substantial oxygen. At 1600 °C, an epitaxial, single crystalline β–SiC film was observed.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 11 , November 1997 , pp. 3099 - 3101
Copyright
Copyright © Materials Research Society 1997

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References

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