Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-27T00:39:27.017Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial growth at PZT/Ir interface

Published online by Cambridge University Press:  31 January 2011

Kumi Okuwada ,
Ken-ichi Yoshida ,
Tomoko Saitou  and
Atsuhito Sawabe
Kumi Okuwada
Affiliation:
Process & Manufacturing Engineering Center, Toshiba Corporation, Yokohama 235-8522, Japan
Ken-ichi Yoshida
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Setagaya, Tokyo 157–8572, Japan
Tomoko Saitou
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Setagaya, Tokyo 157–8572, Japan
Atsuhito Sawabe
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, Setagaya, Tokyo 157–8572, Japan
Get access

Abstract

Surface oxidation of an iridium film and the possibility of epitaxial growth of PZT spin-coated film on sputtered iridium were investigated. The free surface on the iridium film oxidized over 400 °C with random orientation. Nevertheless, both the PZT(111)/Ir(111) and PZT(100)/Ir(100) interfaces were realized using the highly oriented iridium layer. These results suggest that PZT nucleation has priority over iridium surface oxidation.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 12 , December 2000 , pp. 2667 - 2671
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Wouters, D.J., Willems, G., Lee, E.G., and Maes, H.E., Integr. Ferroelectr. 15, 79 (1997).CrossRefGoogle Scholar
2.Okuwada, K., Nakamura, S., Imai, M., and Kakuno, K., Jpn. J. Appl. Phys. 29, 1153 (1990).CrossRefGoogle Scholar
3.Okuwada, K., Nakamura, S., Imai, M., and Kakuno, K., Jpn. J. Appl. Phys. 30, L1052 (1991).CrossRefGoogle Scholar
4.Nakamura, T., Nakao, Y., Kamisawa, A., and Takasu, H., Jpn. J. Appl. Phys. 33, 5207 (1994).CrossRefGoogle Scholar
5.Peuckert, M., Electrochim. Acta 29, 1315 (1984).CrossRefGoogle Scholar
6.Okuwada, K., Imai, M., and Kakuno, K., Ceram. Trans. 22, 713 (1991).Google Scholar