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Electron microscopic studies of internal gettering of nickel in silicon

Published online by Cambridge University Press:  31 January 2011

P.K. Sinha  and
W.S. Glaunsinger
P.K. Sinha
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, Arizona 85287-1604
W.S. Glaunsinger
Affiliation:
Department of Chemistry, Arizona State University, Tempe, Arizona 85287-1604
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Abstract

The internal gettering of nickel in (100) silicon wafers implanted with 2.5 ⊠ 1015 argon-ions/cm2 at 280 keV has been studied by electron microscopy. Nickel deposited on the back surface is gettered by forming a discontinuous layer of nickel silicide, NiSi2, in the argon-implanted region near the front surface. Electron microdiffraction and high-resolution electron microscopy indicate that the layers of nickel silicide probably grow epitaxially on the undamaged silicon surrounding the silicide.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 5 , May 1990 , pp. 1013 - 1016
Copyright
Copyright © Materials Research Society 1990

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References

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