Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-26T10:00:45.061Z Has data issue: false hasContentIssue false

Electron diffraction and microscopy study of oxygen ordering in YBa2Cu3O7-δ

Published online by Cambridge University Press:  31 January 2011

C. J. Hou
Affiliation:
Center for Materials Science and Engineering, ETC 5.160, University of Texas at Austin, Austin, Texas 78712-1084
A. Manthiram
Affiliation:
Center for Materials Science and Engineering, ETC 5.160, University of Texas at Austin, Austin, Texas 78712-1084
L. Rabenberg
Affiliation:
Center for Materials Science and Engineering, ETC 5.160, University of Texas at Austin, Austin, Texas 78712-1084
J. B. Goodenough
Affiliation:
Center for Materials Science and Engineering, ETC 5.160, University of Texas at Austin, Austin, Texas 78712-1084
Get access

Abstract

Electron-diffraction techniques have been used to study the ordering of oxygen atoms within the Cu(1)O1-δ plane of YBa2Cu3O7-δ. The results show that ordering along a single axis and ordering along two orthogonal axes both occur and alternate systematically across the composition range 0.06 < δ < 0.75. Where the ordering is restricted to a single axis, it is found to be the crystallographic a axis. Various models of oxygen ordering are proposed to explain the observed diffraction phenomena. In addition to the ordering of oxygen atoms that give the diffuse diffraction spots at (h/2,0,0) and (0, k/2,0), a second type of ordering reflection that occurs at (h/3,0,0) and (0,k/3,0) was also observed. These sharper and more strongly streaked diffraction maxima are explained in terms of a defect in the cation sublattice.

Type
Articles
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

l Shaw, T. M., Shinde, S. L., Dimos, D., Cook, R. F., Duncombe, P. R., and Kroll, C., J. Mater. Res. 4, 248 (1989).CrossRefGoogle Scholar
2 Van Tendeloo, G. and Amelinckx, S., J. Electron Micros. Tech. 8, 285 (1988).CrossRefGoogle Scholar
3 Alario-Franco, M. A., Chaillout, C., Capponi, J. J., and Chenavas, J., Mater. Res. Bull. 22, 1685 (1987).CrossRefGoogle Scholar
4 Chaillout, C., Alario-Franco, M. A., Capponi, J. J., Chenavas, J., Strobel, P., and Marezio, M., Solid State Commun. 65, 283 (1988).CrossRefGoogle Scholar
5 Manthiram, A., Swinnea, J.S., Sui, Z.T., Steinfink, H., and Goodenough, J. B., J. Am. Chem. Soc. 109, 6667 (1987).CrossRefGoogle Scholar
6 Goodenough, J. B., Mater. Res. Bull. 23, 401 (1988).CrossRefGoogle Scholar
7 Cava, R. J., Batlogg, B., Chen, C. H., Rietman, E. A., Zahurak, S. M., and Werder, D., Nature 329, 423 (1987); Phys. Rev. B 36,5719 (1987)Google Scholar
8 Batlogg, B. (private communication).Google Scholar
9 Goodenough, J. B., “Workshop on the Materials Science of High-TcSuperconductors—Magnetic Interactions,” National Institute of Standards and Technology, Gaithersburg, MD, October 11–13 (1988) (in press).Google Scholar