Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-26T06:48:56.961Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effects of the Mechanical Properties of the Confinement Material on Electromigration in Metallic Interconnects

Published online by Cambridge University Press:  31 January 2011

Stefan P. Hau-Riege  and
Carl V. Thompson
Stefan P. Hau-Riege
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Carl V. Thompson
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Get access

Abstract

New low-dielectric-constant interlevel dielectrics are being investigated as alternatives to SiO2 for future integrated circuits. In general, these materials have very different mechanical properties from SiO2. In the standard model, electromigration-induced stress evolution caused by changes in the number of available lattice sites in interconnects is described by an effective elastic modulus, B. Finite element calculations were carried out to obtain B as a function of differences in the modulus, E, of interlevel dielectrics, for several stress-free homogeneous dilational strain configurations, for several line aspect ratios, and for different metallization schemes. In contradiction to earlier models, we found that for Cu-based metallization schemes with liners, a decrease in E by nearly two orders of magnitude has a relatively small effect on B, changing it by less than a factor of 2. However, B, and therefore the reliability of Cu interconnects, can be strongly dependent on the modulus and thickness of the liner material.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 8 , August 2000 , pp. 1797 - 1802
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Hu, C-K., Rosenberg, R., Rathore, H.S., Nguyen, D.B., and Agarwala, B., in Proceedings of the IEEE 1999 International Interconnect Technology Conference (IEEE, Piscataway, NJ, 1999), p. 267.Google Scholar
2.Korhonen, M.A., Boergesen, P., Tu, K.N., and Li, C-Y., J. Appl. Phys. 73, 3790 (1993).CrossRefGoogle Scholar
3.Park, Y-J., Andleigh, V.K., and Thompson, C.V., J. Appl. Phys. 85, 3546 (1999).CrossRefGoogle Scholar
4. A description and demonstration of MIT/EmSim (Electromigra-tion Simulator) is accessible on the World Wide Web at http://nirvana.mit.edu/emsim.Google Scholar
5.Thompson, C.V. and Kahn, H., J. Electr. Mater. 22, 581 (1993).CrossRefGoogle Scholar
6.Edelstein, D., Heidenreich, J., Goldblatt, R., Cote, W., Uzoh, C., Lustig, N., Roper, P., McDevitt, T., Motsiff, W., Simon, A., Dukovic, J., Wachnik, R., Rathore, H., Schulz, R., Su, L., Luce, S., and Slattery, J., IEEE Int. Electron Devices Meeting Digest, 773 (1997).CrossRefGoogle Scholar
7.Hu, C-K., Rosenberg, R., and Lee, K.Y., Appl. Phys. Lett 74, 2945 (1999).CrossRefGoogle Scholar
8.Price, D.T., Gutmann, R.J., and Murarka, S.P., Thin Solid Films 308–309, 523 (1997).CrossRefGoogle Scholar
9.Lau, K.S.Y, Drage, J.S., Hacker, N.P., Rutherford, N.M., Katsanes, R.R., Korolev, B.A., Krajewski, T.A., Lefferts, S.P., Sayad, H., Sebahar, P.R., Smith, A.R., Wan, W.B., and White, E.C., in Proceedings of the Thirteenth International VLSI Multilevel Interconnection Conference (VMIC) (Tampa, FL, 1996), p. 92.Google Scholar
10.Waeterloos, J., Simmonds, M., Achen, A., and Meier, M., Eur. Semicond. 21, 26 (1999).Google Scholar
11.Loke, A.L.S, Wetzel, J.T., Townsend, P.H., Tanabe, T., Vrtis, R.N., Zussman, M.P., Kumar, D., Ryu, C., and Wong, S.S., IEEE Trans. Electron Devices 46, 2178 (1999).CrossRefGoogle Scholar
12.Eshelby, J.D., Proc. R. Soc. A 241, 376 (1957).Google Scholar
13. Abaqus, Version 5.8, general purpose finite element program, Hibbit, Karlson, and Sorensen, Inc., Pawtucket, RI, 1998.Google Scholar
14.Simmons, G. and Wang, H., Single Crystal Elastic Constants and Calculated Aggregate Properties: A Handbook (M.I.T Press, Cambridge, MA, 1971).Google Scholar
15.Sauter, A.I. and Nix, W.D., IEEE Trans. Comp. 15, 594 (1992).Google Scholar
16.Noyan, I.C. and Cohen, J.B., Residual Stress (Springer Verlag, New York, 1987).CrossRefGoogle Scholar
17.Paranjpe, A., Bubber, R., Veto, L., Guihua, Chang, Gopinath, S., Dalton, J., and Moslehi, M., in Proceedings of the IEEE 1999 International Interconnect Technology Conference (IEEE, Piscataway, NJ, 1999), p. 119.Google Scholar
18.Chatterjee, A., Eur. Semicond. 21, 39 (1999).Google Scholar
19.Blech, I.A., J. Appl. Phys. 47, 1203 (1976).CrossRefGoogle Scholar
20.Suo, Z., Acta Mater. 46, 3725 (1998).CrossRefGoogle Scholar