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Effects of dopants in PZT films

Published online by Cambridge University Press:  03 March 2011

Jhing-Fang Chang  and
Seshu B. Desua
Jhing-Fang Chang
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061–0237
Seshu B. Desua
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061–0237
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Abstract

Undoped and lanthanide (La and Nd) doped Pb(ZrxTi1-x)03, i.e., PZT, ferroelectric thin films were prepared by metallorganic decomposition (MOD) and spin-coating. The precursors for making the undoped PZT films were derived from lead acetate, zirconium n-propoxide, and titanium isopropoxide. In addition, lanthanum acetylacetonate and neodymium acetate were introduced into the precursor solution to accomplish the doping of the corresponding elements. Both undoped and doped PZT films were coated onto Pt/Ti/Si02/Si and single-crystal sapphire substrates to various thicknesses and annealed at a range of temperatures and times. The effects of lanthanide dopants in PZT films were studied with regard to microstructure, Curie temperatures, crystal distortion, optical properties, and electrical properties. The results indicate that the addition of La and Nd dopants tends to enhance perovskite phase formation and improve the packing densities and electrical properties of PZT films.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 4 , April 1994 , pp. 955 - 969
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1Oikawa, M. and Toda, K., Appl. Phys. Lett. 29, 491 (1976).CrossRefGoogle Scholar
2Castellano, R., Ferroelectrics 28, 387 (1980).CrossRefGoogle Scholar
3Chiang, C., Cook, C., Schenck, P., Brody, P., and Benedetto, J., in Ferroelectric Thin Films, edited by Myers, E. R. and Kingon, A. I. (Mater. Res. Soc. Symp. Proc. 200, Pittsburgh, PA, 1990), p. 133.Google Scholar
4Saenger, J. K., Roy, R., Etzold, K., and Cuomo, J., in Ferroelectric Thin Films, edited by Myers, E. R. and Kingon, A. I. (Mater. Res. Soc. Symp. Proc. 200, Pittsburgh, PA, 1990), p. 115.Google Scholar
5Peng, C. H. and Desu, S. B., Appl. Phys. Lett. 61, 1 (1992).Google Scholar
6Budd, K. D., Dey, S. K., and Payne, D. A., Proc. Brit. Ceram. Soc. 36, 107 (1985).Google Scholar
7Fukushima, J., Kodaira, K., and Marsushita, T., J. Mater. Sci. 19, 595 (1984).CrossRefGoogle Scholar
8Yi, G., Wu, A., and Sayer, M., J. Appl. Phys. 64, 2717 (1988).CrossRefGoogle Scholar
9Wu, Y., Ferroelectric Materials and Their Applications (North Holland, New York, 1991).Google Scholar
10Haertling, G. H. and Land, C. E., J. Am. Ceram. Soc. 54 (1), 1 (1971).CrossRefGoogle Scholar
11Tandon, R. P., Singh, V., and Swami, N. N., J. Mater. Soc. Lett. 11, 327 (1992).CrossRefGoogle Scholar
12Budd, K. D., Ph.D. Thesis, University of Illinois at Urbana–Champaign (1986).Google Scholar
13Peng, C. H., Ph.D. Thesis, Virginia Polytechnic Institute and State University, Blacksburg, VA (1992).Google Scholar
14Kwok, C. K., Ph.D. Thesis, Virigina Polytechnic Institute and State University, Blacksburg, VA (1992).Google Scholar
15Tuttle, B. A., Schwartz, R. W., Doughty, D. H., and Voigt, J. A., in Ferroelectric Thin Films, edited by Myers, E. R. and Kingon, A. I. (Mater. Res. Soc. Symp. Proc. 200, Pittsburgh, PA, 1990), p. 159.Google Scholar
16Kwok, C. K. and Desu, S. B., in ASC Symposium Series 25, Ferroelectric Films, edited by Bhalla, A. (1992), p. 85.Google Scholar
17Schwartz, R., Bunker, B., Dimos, D., Assink, R., Tuttle, B., and Weinstock, I., Ferroelectrics (in press).Google Scholar
18Desu, S. B., Peng, C., Kammerdiner, L., and Schuele, P., in Ferroelectric Thin Films, edited by Myers, E.R. and Kingon, A.I. (Mater. Res. Soc. Symp. Proc. 200, Pittsburgh, PA, 1990), p. 319.Google Scholar
19Chang, J. F. and Desu, S. B., in ASC Symposium Series 25, Ferroelectric Films, edited by Bhalla, A. (1992), p. 155.Google Scholar
20Spierings, G., Ulenaers, M., Kampschoer, G., van Jal, H., and Larsen, P., J. Appl. Phys. 70 (4), 2290 (1991).CrossRefGoogle Scholar
21Kwok, C. K. and Desu, S. B., Appl. Phys. Lett. 60 (12), 1430 (1992).CrossRefGoogle Scholar
22Yamamoto, T., Igarashi, H., and Okazaki, K., J. Am. Ceram. Soc. 66 (5), 363 (1983).CrossRefGoogle Scholar