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Effect of substrates on the growth and properties of LiNbO3 films by the sol-gel method

Published online by Cambridge University Press:  03 March 2011

Nam H. Hur ,
Yong K. Park ,
Dong H. Won  and
Kwangsoo No
Nam H. Hur
Affiliation:
Korea Research Institute of Standards and Science, Taejon, Republic of Korea
Yong K. Park
Affiliation:
Korea Research Institute of Standards and Science, Taejon, Republic of Korea
Dong H. Won
Affiliation:
Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, Republic of Korea
Kwangsoo No
Affiliation:
Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon, Republic of Korea
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Abstract

Thin films of LiNbO3 were fabricated on sapphire(012), MgO(OOl), and Si(111) substrates by the sol-gel process. Under optimized conditions, films deposited onto sapphire(012) were epitaxially grown. Preferred orientations, however, were not observed in the films on MgO(001) and Si(111) by x-ray diffraction measurements. Morphology of the epitaxial films on sapphire(012) was examined by scanning electron microscopy, which indicated that the films were smooth and had a pore-free surface. Electrical and optical measurements on the epitaxial films revealed that the properties of the films were very similar to those of the single crystalline LiNbO3, while films deposited onto Si(111) did not show any orientational behaviors. The highest quality films with epitaxy were obtained only on sapphire(012). The remaining substrates appeared to be not suitable for growing epitaxial LiNbO3 films by the sol-gel method.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 4 , April 1994 , pp. 980 - 985
Copyright
Copyright © Materials Research Society 1994

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