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The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy

Published online by Cambridge University Press:  03 March 2011

S.F. Yoon ,
H.M. Li ,
K. Radhakrishnan  and
D.H. Zhang
S.F. Yoon
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 2263, Republic of Singapore
H.M. Li
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 2263, Republic of Singapore
K. Radhakrishnan
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 2263, Republic of Singapore
D.H. Zhang
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 2263, Republic of Singapore
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Abstract

Low-temperature photoluminescence measurements have been taken to monitor the changes in the properties of strained GaAs/InGaAs/GaAs quantum wells grown by molecular beam epitaxy at different substrate (well) temperatures with and without a 90 s-growth-interruption at the heterointerfaces. Sharp exciton peaks with average linewidths as low as 1.7 meV were observed in all the spectra. The spectra from the samples grown employing interrupts were narrower than those without interrupts, indicating structurally improved interfaces. Further linewidth narrowing was also seen in samples employing an additional interrupt of the same duration at the bottom InGaAs/GaAs interface, or by increasing the interrupt time at the top GaAs/InGaAs interface to 180 s. A consistent reduction in the linewidth was also observed in wells grown at higher temperatures. This is most likely due to greater indium re-evaporation leading to a reduction in strain, well width, and interface fluctuations.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 12 , December 1993 , pp. 3122 - 3125
Copyright
Copyright © Materials Research Society 1993

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References

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