Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-26T21:21:26.505Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of growth gas flow rate on the SiC crystal resistivity

Published online by Cambridge University Press:  03 July 2012

Shenghuang Lin  and
Zhiming Chen
Shenghuang Lin*
Affiliation:
Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, Peoples Republic of China
Zhiming Chen
Affiliation:
Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, Peoples Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

A technique of controlling growth gas flow rate for adjusting crystal resistivity is presented in this paper. The experimental results showed that high growth gas flow rate could affect SiC crystal resistivity remarkably. The SiC crystal resistivity would get higher and higher with increasing growth gas flow rate. The purifying effect of gas flow rate was contributing to resistivity increase at a relatively low flow rate range. As for the high gas flow rate, increase of resistivity might be explained by the well-known site competition effect. Then, one explanation for reducing nitrogen content in the crystal via increasing gas flow rate was put forward. Namely, the Si component in the gas species may more easily go through the graphite crucible at the initial stage to make the growth ambient C-rich when the gas flow rate is ∼800 sccm or more and hence suppress nitrogen incorporation into carbon site to increase crystal resistivity. This result is very helpful to grow high purity high resistivity SiC ingots.

Keywords

SiCphysical vapor transportresistivitygrowth gas flow rate
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 1: Focus Issue: Silicon Carbide – Materials, Processing and Devices , 14 January 2013 , pp. 23 - 27
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Devaty, R.P. and Choyke, W.J.: Optical characterization of silicon carbide polytypes. Phys. Status Solidi A 162, 5 (1997).3.0.CO;2-J>CrossRefGoogle Scholar
Weitzel, C.E.: Silicon carbide high frequency devices. Mater. Sci. Forum 264–268, 907 (1998).CrossRefGoogle Scholar
Linnarsson, M.K., Janson, M.S., Nordell, N., Wong-Leung, J., and Schöner, A.: Formation of precipitates in heavily boron doped 4H-SiC. Appl. Surf. Sci. 252, 5316–5320 (2006).CrossRefGoogle Scholar
Tupitsyn, E.Y., Arulchakkaravarthi, A., Drachev, R.V., and Sudarshan, T.S.: Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth. J. Cryst. Growth 299, 70–76 (2007).CrossRefGoogle Scholar
Schmitt, E., Straubinger, T., Rasp, M., Vogel, M., and Wohlfart, A.: Polytype stability and defects in differently doped bulk SiC. J. Cryst. Growth 310, 966–970 (2008).CrossRefGoogle Scholar
Wutimakun, P., Buteprongjit, C., and Morimoto, J.: Nondestructive three-dimensional observation of defects in semi-insulating 6H-SiC single-crystal wafers using a scanning laser microscope (SLM) and infrared light-scattering tomography (IR-LST).J. Cryst. Growth 311, 3781–3786 (2009).CrossRefGoogle Scholar
Lin, S.H., Chen, Z.M., Liang, P., Ba, Y.T., and Liu, S.J.: Formation and suppression of misoriented grains in 6H-SiC crystals. CrystEngComm 13, 2709 (2011).CrossRefGoogle Scholar
Lin, S.H., Chen, Z.M., Yang, Y., Liu, S.J., Ba, Y.T., and Yang, C.: Formation and evolution of micropipes in SiC crystals. CrystEngComm 14, 1588 (2012).CrossRefGoogle Scholar
Pearton, S.J., Park, Y.D., Abernathy, C.R., Overberg, M.E., Thaler, G.T., Kim, J., Ren, F., Zavada, J.M., and Wilson, R.G.: Ferromagnetism in GaN and SiC doped with transition metals. Thin Solid Films 447–448, 493–501 (2004).CrossRefGoogle Scholar
Huang, Z. and Chen, Q.W.: Magnetic properties of Cr-doped 6H-SiC single crystals. J. Magn. Magn. Mater. 313, 111–114 (2007).Google Scholar
Lin, S.H., Chen, Z.M., Liang, P., Jiang, D., and Xie, H.J.: Room-temperature ferromagnetism of vanadium-doped 6H-SiC. Chem. Phys. Lett. 496, 56 (2010).CrossRefGoogle Scholar
Tairov, Y.M. and Tsvekov, V.F.: Investigation of growth processes of ingots of silicon carbide single crystals. J. Cryst. Growth 43, 209 (1978).CrossRefGoogle Scholar
Fanton, M.A., Li, Q., Polyakov, A.Y., Skowronski, M., Cavalero, R., and Ray, R.: Effects of hydrogen on the properties of SiC crystals grown by physical vapor transport: Thermodynamic considerations and experimental results. J. Cryst. Growth 287, 339–343 (2006).CrossRefGoogle Scholar
Yang, Y., Lin, T., and Chen, Z.M.: Effect of growth gas flow rate on the defects density of SiC single crystal. J. Semicond. 29, 851–854 (2008).Google Scholar
Larkin, D.J., Neudeck, P.G., Powell, J.A., and Matus, L.G.: Site-competition epitaxy for superior silicon carbide electronics. Appl. Phys. Lett. 65, 1659 (1994).CrossRefGoogle Scholar
Miyata, M., Higashiguchi, Y., and Hayafuji, Y.: Ab initio study of substitutional impurity atoms in 4H-SiC. J. Appl. Phys. 104, 123702 (2008).CrossRefGoogle Scholar
Li, Q., Polyakov, A.Y., Skowronski, M., Sanchez, E.K., Loboda, M.J., Fanton, M.A., Bogart, T., and Gamble, R.D.: Nonuniformities of electrical resistivity in undoped 6H-SiC wafers. J. Appl. Phys. 97, 113705 (2005).CrossRefGoogle Scholar